UNISONIC TECHNOLOGIES CO., LTD
5N65
5A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
5N65
is a high voltage power MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching
applications at power supplies, PWM motor controls, high efficient DC
to DC converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 2.4Ω @V
GS
= 10 V
* Ultra Low Gate Charge ( Typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness0
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N65L-TA3-T
5N65G-TA3-T
5N65L-TF3-T
5N65G-TF3-T
5N65L-TF1-T
5N65G-TF1-T
5N65L-TF2-T
5N65G-TF2-T
5N65L-TF3T-T
5N65G-TF3T-T
5N65L-TM3-T
5N65G-TM3-T
5N65L-TN3-R
5N65G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-592.D
5N65
MARKING
Power MOSFET
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QW-R502-592.D
5N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
Single Pulsed (Note 3)
mJ
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
V/ns
TO-220
TO-220F/TO-220F1
36
Power Dissipation
P
D
W
TO-220F2/TO-220F3
TO-251/TO-252
54
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. L = 16.8mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
RATINGS
650
±30
5
5
20
210
10
4.5
100
UNIT
V
V
A
A
A
THERMAL DATA
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251 / TO-252
TO-220
TO-220F/TO-220F1
TO-220F2/TO-220F3
TO-251 / TO-252
SYMBOL
θ
JA
RATINGS
62.5
62.5
160
1.25
θ
JC
3.47
2.3
°C/W
UNIT
°C/W
Junction to Ambient
Junction to Case
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QW-R502-592.D
5N65
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
GS
=0V, I
D
= 250μA
650
V
DS
=650V, V
GS
= 0V
Forward
V
GS
=30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25℃
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
= 2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
Output Capacitance
C
OSS
f = 1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
V
DD
= 325V, I
D
=5A,
R
G
= 25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
= 520 V, I
D
= 5A,
Gate-Source Charge
Q
GS
V
GS
= 10 V (Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 5A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
V
GS
= 0 V, I
S
=5A,
d
IF
/ dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV
DSS
I
DSS
1
100
-100
0.6
4.0
2.4
670
72
8.5
30
90
85
100
19
V
μA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
2.0
515
55
6.5
10
42
38
46
15
2.5
6.6
1.4
5
20
300
2.2
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5N65
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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MCU
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