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1N649

Description
0.4 A, SILICON, SIGNAL DIODE, DO-7
Categorysemiconductor    Discrete semiconductor   
File Size263KB,6 Pages
ManufacturerETC
Download Datasheet Parametric View All

1N649 Overview

0.4 A, SILICON, SIGNAL DIODE, DO-7

1N649 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionDO-7, 2 PIN
stateCONSULT MFR
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsUNSPECIFIED
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.4000 W
Diode typeSignal diode
Maximum average forward current0.4000 A

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