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MSCD104H

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 500mV @ 1A 40V, 1A Schottky, VF=0.47V(typ)@1A
CategoryDiscrete semiconductor    Schottky diode   
File Size43KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
Download Datasheet Parametric View All

MSCD104H Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 1A Forward voltage drop (Vf): 500mV @ 1A 40V, 1A Schottky, VF=0.47V(typ)@1A

MSCD104H Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)40V
Average rectified current (Io)1A
Forward voltage drop (Vf)500mV @ 1A
ZOWIE
MSCD102H THRU MSCD106H
Schottky Barrier Diode
(20V~60V / 1.0 A)
OUTLINE DIMENSIONS
FEATURES
*
*
*
*
*
*
Halogen-free type
Compliance to RoHS product
Lead less chip form, no lead damage
Low power loss, High efficiency
High current capability, low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Case : 0805
0.05
2.00 ± 0.1
1.30 ± 0.1
1.00
Typ.
Unit : mm
R 0.
275
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
0.45 ± 0.1
0.45 ± 0.1
Equivalent : SOD-323
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.005 gram
MARKING
Cathode mark
Amps class
+ 0.2
0.80
- 0.1
A
Voltage class
.
Halogen-free type
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
5 reels per box
*
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
o
Conditions
MSCD102H
20
MSCD104H
40
1.0
MSCD106H
60
Unit
V
A
A
8.3ms single half sine-wave
10
-55 to +125
- 55 to +150
-55 to +150
o
o
C
C
Electrical characteristics (Ta = 25 C)
ITEM
Symbol
Conditions
I
F
= 0.1 A
I
F
= 0.5 A
I
F
= 1.0 A
I
F
= 0.1 A
I
F
= 0.5 A
I
F
= 1.0 A
I
F
= 0.1 A
I
F
= 0.5 A
I
F
= 1.0 A
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient
Junction to lead
Type
MSCD102H
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.32
0.39
0.42
0.33
0.40
0.47
0.38
0.50
0.62
0.028
115
120
28
Max.
-
-
0.45
-
-
0.50
-
-
0.65
0.20
-
-
-
Unit
Forward voltage (NOTE 1)
V
F
MSCD104H
V
MSCD106H
Repetitive peak reverse current (NOTE 1)
Junction capacitance
Thermal resistance
I
RRM
C
j
R
th(JA)
R
th(JL)
mA
pF
o
o
C/W
C/W
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
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