1N6642 datasheet, PDF - EEWORLD Datasheet

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1N6642: Description0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35; Categorysemiconductor Discrete semiconductor; File Size71KB，2 Pages; ManufacturerCDI-DIODE; Websitehttp://www.cdi-diodes.com

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1N6642 Overview

0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35

1N6642 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	HERMETIC SEALED, glass PACKAGE-2
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	tin lead
Terminal location	AXIAL
Packaging Materials	Glass
structure	single
Shell connection	isolation
Diode component materials	silicon
Maximum power consumption limit	0.7500 W
Diode type	Signal diode
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	75 V
Maximum average forward current	0.3000 A

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• 1N6638,1N6642, 1N6643 AVAILABLE IN

JAN, JANTX, JANTXV,

AND

JANS

PER MIL-PRF-19500/578

• SWITCHING DIODES

• NON-CAVITY GLASS PACKAGE

• METALLURGICALLY BONDED

1N6638

1N6642

1N6643

MAXIMUM RATINGS

Operating Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA

Derating: 3.0 mA/°C Above TL = + 75°C @L = 3/8”

Surge Current: I

FSM

= 2.5A, half sine wave, Pw = 8.3ms

0.056/0.075

1.42/1.91

POLARITY

BAND

(CATHODE)

0.140/0.180

3.55/4.57

1.00

25.4

0.018/0.022

0.46/0.56

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

V BR

@IR

=100µA

V RWM

V F1

I FM

= 10 mA

(Pulsed)

V dc

0.8

1.0

V dc

1.1

1.2

V F2 @ I F2

t fr

= 50 mA

t rr

TYPES

(Pulsed)

200

100

4.5

5.0

6.0

FIGURE 1

V(PK)

(min)

1N6638

1N6642

1N6643

150

100

V(PK)

125

DESIGN DATA

CASE:

Hermetically sealed, “D” Body

per MIL-PRF- 19500/578. D-5D

LEAD MATERIAL:

Copper clad steel

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJL): 160

°C/W maximum at L = .375

THERMAL IMPEDANCE: (Z

OJX): 25

°C/W maximum

POLARITY:

Cathode end is banded.

I R1

TYPES

= 20 V

nA dc

I R2

@V R

= V RWM

µA dc

I R3

V R = 20 V

TA = 150°C

µA dc

I R4

V R = V RWM

TA = 150°C

µA dc

C T1

VR=

C T2

VR=

1.5V

1N6638

1N6642

1N6643

0.5

100

160

2.5

5.0

2.0

2.8

MOUNTING POSITION:

Any

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

1N6642 Related Products

	1N6642	1N6638	1N6643
Description	0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35	0.2 A, 125 V, SILICON, SIGNAL DIODE	0.1 A, 50 V, SILICON, SIGNAL DIODE

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