BAS16L,315 datasheet, PDF - EEWORLD Datasheet

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BAS16L,315: DescriptionReverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA; CategoryDiscrete semiconductor diode; File Size414KB，22 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com

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BAS16L,315 Overview

Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA

BAS16L,315 Parametric

Parameter Name	Attribute value
Brand Name	Nexperia
Parts packaging code	DFN
package instruction	1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, PLASTIC PACKAGE-2
Contacts	2
Manufacturer packaging code	SOD882
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PBCC-N2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.215 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
Base Number Matches	1

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Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename

Nexperia.

Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use

http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com

(email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via

salesaddresses@nexperia.com).

Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

BAS16L,315 Related Products

	BAS16L,315	BAS16J
Description	Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 215mA Forward voltage drop (Vf): 1.25V @ 150mA	Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon
package instruction	1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, PLASTIC PACKAGE-2	SC-90, 2 PIN
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	R-PBCC-N2	R-PDSO-F2
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	2	2
Maximum operating temperature	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C
Maximum output current	0.215 A	0.25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Maximum power dissipation	0.25 W	0.55 W
Maximum repetitive peak reverse voltage	100 V	100 V
Maximum reverse recovery time	0.004 µs	0.004 µs
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	NO LEAD	FLAT
Terminal location	BOTTOM	DUAL
Maximum time at peak reflow temperature	40	30

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