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CKG45NX7S2A106M

Description
Accuracy: ±20% Capacitance: 10uF Rated voltage: 100V Temperature drift coefficient (dielectric material): X7S
CategoryPassive components    The patch capacitance   
File Size497KB,12 Pages
ManufacturerTDK Corporation
Websitehttp://www.tdk.com
Download Datasheet Parametric Compare View All

CKG45NX7S2A106M Overview

Accuracy: ±20% Capacitance: 10uF Rated voltage: 100V Temperature drift coefficient (dielectric material): X7S

CKG45NX7S2A106M Parametric

Parameter NameAttribute value
Accuracy±20%
Capacitance10uF
Rated voltage100V
Temperature drift coefficient (dielectric material)X7S
MULTILAYER CERAMIC CHIP CAPACITORS
February 2019
积层贴片陶瓷片式电容器
一般等级、金属支架电容
CKG
系列
1层型
CKG32K
CKG45K
CKG57K
堆双层型
CKG45N
CKG57N
3225 [1210 inch]
4532 [1812 inch]
5750 [2220 inch]
4532 [1812 inch]
5750 [2220 inch]
*
表示尺寸代码。
JIS[EIA]

CKG45NX7S2A106M Related Products

CKG45NX7S2A106M CKG57NX7R2J474M CKG45NX7S1C476M CKG57NX7S2A226MT009W
Description Accuracy: ±20% Capacitance: 10uF Rated voltage: 100V Temperature drift coefficient (dielectric material): X7S Accuracy: ±20% Capacitance: 470nF Rated voltage: 630V Temperature drift coefficient (dielectric material): X7R Accuracy: ±20% Capacitance: 47uF Rated voltage: 16V Temperature drift coefficient (dielectric material): X7S Accuracy: ±20% Capacitance: 22uF Rated voltage: 100V Temperature drift coefficient (dielectric material): X7S
Accuracy ±20% - ±20% ±20%
Capacitance 10uF - 47uF 22uF
Rated voltage 100V - 16V 100V
Temperature drift coefficient (dielectric material) X7S - X7S X7S
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