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CSD23381F4

Description
Drain-source voltage (Vdss): 12V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 175mΩ @ 500mA, 4.5V Maximum power dissipation (Ta=25°C): 500mW Type: P-channel P-channel -12V -2.3A 0.5W
CategoryDiscrete semiconductor    The transistor   
File Size797KB,13 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Environmental Compliance
Stay tuned Parametric

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CSD23381F4 Overview

Drain-source voltage (Vdss): 12V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 175mΩ @ 500mA, 4.5V Maximum power dissipation (Ta=25°C): 500mW Type: P-channel P-channel -12V -2.3A 0.5W

CSD23381F4 Parametric

Parameter NameAttribute value
Brand NameTexas Instruments
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerTexas Instruments
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Is SamacsysN
Minimum drain-source breakdown voltage12 V
Maximum drain current (Abs) (ID)2.3 A
JESD-30 codeR-XBGA-N3
Humidity sensitivity level1
Operating mode-0.95
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formGRID ARRAY
Peak Reflow Temperature (Celsius)260
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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