TLP250
TOSHIBA Photocoupler GaAlAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditionor
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8
−
lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
•
•
•
•
•
•
•
•
Input threshold current: I
F
=5mA(max.)
Supply current (I
CC
): 11mA(max.)
Supply voltage (V
CC
): 10
−
35V
Output current (I
O
): ±1.5A (max.)
Switching time (t
pLH
/t
pHL
): 1.5µs(max.)
Isolation voltage: 2500V
rms
(min.)
UL recognized: UL1577, file No.E67349
Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630V
PK
Highest permissible over voltage: 4000V
PK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)"
Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
TOSHIBA
Weight: 0.54 g
11−10C4
Unit in mm
•
Schmatic
I
CC
V
CC
8
I
F
2+
V
F
3-
I
O
(T
r
2)
6
7
(T
r
1)
V
O
Pin Configuration
(top view)
1
2
3
V
O
4
GND
5
8
7
6
A 0.1µF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V
O
(Output)
7 : V
O
8 : V
CC
Truth Table
Tr1
Input
LED
On
Off
On
Off
Tr2
Off
On
1
2004-06-25
TLP250
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
70°C)
LED
Peak transient forward curent
Reverse voltage
Junction temperature
“H”peak output current (P
W
≤
2.5µs,f
≤
15kHz)
“L”peak output current (P
W
≤
2.5µs,f
≤
15kHz)
Output voltage
Detector
(Note 2)
(Note 2)
(Ta
≤
70°C)
(Ta
=
85°C)
(Ta
≤
70°C)
(Ta
=
85°C)
(Note 1)
Symbol
I
F
∆I
F
/
∆Ta
I
FPT
V
R
Tj
I
OPH
I
OPL
V
O
Rating
20
−0.36
1
5
125
−1.5
+1.5
35
24
35
24
−0.73
−0.73
125
25
−20~85
−55~125
260
2500
Unit
mA
mA / °C
A
V
°C
A
A
V
Supply voltage
Output voltage derating (Ta
≥
70°C)
Supply voltage derating (Ta
≥
70°C)
Junction temperature
V
CC
∆V
O
/
∆Ta
∆V
CC
/
∆Ta
Tj
V
V / °C
V / °C
°C
kHz
°C
°C
°C
Vrms
Operating frequency
Operating temperature range
Storage temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 3)
f
T
opr
T
stg
(Note 4)
(Note 5)
T
sol
BV
S
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Pulse width P
W
≤
1µs, 300pps
Exporenential wavefom
Exporenential wavefom, I
OPH
≤
−1.0A(
≤
2.5µs), I
OPL
≤
+1.0A(
≤
2.5µs)
It is 2 mm or more from a lead root.
Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead
length between capacitor and coupler should not exceed 1cm.
Recommended Operating Conditions
Characteristic
Input current, on
Input voltage, off
Supply voltage
Peak output current
Operating temperature
(Note 7)
Symbol
I
F(ON)
V
F(OFF)
V
CC
I
OPH
/I
OPL
T
opr
Min.
7
0
15
―
−20
Typ.
8
Max.
10
0.8
30
±0.5
70
85
20
Unit
mA
V
V
A
°C
―
―
―
25
Note 7: Input signal rise time (fall time)
<
0.5
µs.
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2004-06-25
TLP250
Electrical Characteristics
(Ta =
−20~70°C,
unless otherwise specified)
Characteristic
Input forward voltage
Temperature coefficient of
forward voltage
Input reverse current
Input capacitance
“H” level
Output current
“L” level
“H” level
Output voltage
“L” level
V
OL
5
I
OPL
V
OH
2
4
Symbol
V
F
∆V
F
/
∆Ta
I
R
C
T
I
OPH
Test
Cir−
cuit
―
―
―
―
3
Test Condition
I
F
=
10 mA , Ta = 25°C
I
F
=
10 mA
V
R
= 5V, Ta = 25°C
V = 0 , f = 1MHz , Ta = 25°C
V
CC
= 30V
(*1)
I
F
=
10 mA
V
8−6
=
4V
I
F
=
0
V
6−5
=
2.5V
―
−0.5
0.5
11
―
―
―
―
―
0.8
10
V
S
= 0 , f = 1MHz
Ta = 25℃
V
S
= 500V , Ta = 25°C
R.H.≤ 60%
―
1×10
12
Min.
Typ.*
1.6
Max.
1.8
―
10
250
―
Unit
V
mV / °C
µA
pF
―
−2.0
―
45
−1.5
2
12.8
−14.2
7
―
7.5
―
1.2
―
―
1.0
10
14
A
―
―
V
−12.5
―
11
11
5
―
35
2.0
―
mA
V
V
pF
Ω
mA
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, I
F
= 5mA
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, V
F
= 0.8V
V
CC
= 30V, I
F
= 10mA
Ta = 25°C
V
CC
= 30V, I
F
= 10mA
“H” level
Supply current
“L” level
Threshold input
current
Threshold input
voltage
Supply voltage
Capacitance
(input−output)
Resistance(input−output)
“Output
L→H”
“Output
H→L”
I
CCH
―
I
CCL
―
V
CC
= 30V, I
F
= 0mA
Ta = 25°C
V
CC
= 30V, I
F
= 0mA
I
FLH
I
FHL
V
CC
C
S
R
S
―
―
―
―
―
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, V
O
> 0V
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω, V
O
< 0V
* All typical values are at Ta = 25°C
(*1): Duration of I
O
time
≤
50µs
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2004-06-25
TLP250
Switching Characteristics
(Ta =
−20~70°C
, unless otherwise specified)
Characteristic
Propagation
delay time
Output rise time
Output fall time
Common mode transient
immunity at high level
output
Common mode transient
immunity at low level
output
L→H
H→L
Symbol
t
pLH
t
pHL
t
r
t
f
C
MH
7
V
CM
= 600V, I
F
= 8mA
V
CC
= 30V, Ta = 25°C
V
CM
= 600V, I
F
= 0mA
V
CC
= 30V, Ta = 25°C
6
I
F
= 8mA (Note 7)
V
CC1
= +15V, V
EE1
=
−15V
R
L
= 200Ω
Test
Cir−
cuit
Test Condition
Min.
―
―
―
―
−5000
Typ.*
0.15
0.15
―
―
―
Max.
0.5
0.5
―
―
―
V / µs
µs
Unit
C
ML
7
5000
―
―
V / µs
* All typical values are at Ta = 25°C
Note 7: Input signal rise time (fall time)
<
0.5
µs.
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2004-06-25
TLP250
Test Circuit 1 :
Test Circuit 2 : IOPL
8
1
8
1
0.1µF
A
4
5
4
I
OPL
V
6-5
V
CC
Test Circuit 3 : IOPH
8
1
V
CC
0.1µF
I
F
A
4
I
OPH
V
8-6
Test Circuit 4 : VOH
8
1
V
CC1
0.1µF
I
F
R
L
V V
OH
4
V
EE1
Test Circuit 5 : V
OL
8
1
0.1µF
V
F
V
4
V
EE1
R
L
V
OL
V
CC1
5
2004-06-25
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