TLP559
TOSHIBA Photocoupler
GaAℓAs Ired & Photo IC
TLP559
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Transistor Inverter
The TOSHIBA TLP559 consists of a GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor. This
unit is 8−lead DIP package.
TLP559 has no internal base connection, and a Faraday shield integrated
on the photodetector chip provides an effective common mode noise
transient immunity.
So this is suitable for application in noisy environmental condition.
•
•
•
•
•
Isolation voltage: 2500 Vrms (min)
Switching speed: t
pHL
= 0.2μs (typ.)
t
pLH
= 0.3μs (typ.) (R
L
= 1.9kΩ)
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Unit: mm
TTL compatible
UL recognized: UL1577, file No.E67349.
cUL approved: CSA Component Acceptance Service No.5A,
file No.E67349.
Pin Configuration
(top view)
1
2
3
4
Shield
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : Emitter
6 : Collector
7 : N.C.
8 : V
CC
Schematic
I
CC
I
F
2
V
F
3
I
O
6
V
O
8
V
CC
Shield
5
GND
Start of commercial production
1987/09
1
2017-12-20
TLP559
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Pulse forward current
LED
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Detector
Peak output current
Output voltage
Supply voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage (AC, 1 minute, R.H.
≤
60%)
(Note 6)
(Note 7)
(Note 5)
(Note 4)
(Note 1)
(Note 2)
(Note 3)
Symbol
I
F
I
FP
I
FPT
V
R
P
D
I
O
I
OP
V
O
V
CC
P
O
T
opr
T
stg
T
sol
BV
S
Rating
25
50
1
5
45
8
16
−0.5
to 15
−0.5
to 15
100
−55
to 100
−55
to 125
260
2500
Unit
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
Derate 0.8mA above 70°C.
50% duty cycle,1ms pulse width.Derate 1.6mA / °C above 70°C.
Pulse width
≤
1μs, 300pps.
Derate 0.9mW / °C above 70°C.
Derate 2mW / °C above 70°C.
Soldering portion of lead: up to 2mm from body of the devise.
Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
2
2017-12-20
TLP559
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Forward voltage
temperature coefficient
Reverse current
Capacitance between terminal
Symbol
V
F
ΔV
F
/
ΔTa
I
R
C
T
I
OH (1)
High level output current
Detector
I
OH (2)
I
OH
High level supply voltage
Supply voltage
Output voltage
I
CCH
V
CC
V
O
I
F
= 16mA
I
F
= 16mA
V
R
= 5V
V
F
= 0V, f = 1MHz
I
F
= 0mA, V
CC
= V
O
= 5.5V
I
F
= 0mA, V
CC
= V
O
= 15V
I
F
= 0mA, V
CC
= 15V
V
O
= 15V, Ta = 70°C
I
F
= 0mA, V
CC
= 15V
I
CC
= 0.01 mA
I
O
= 0.5 mA
Test Condition
Min
―
―
―
―
―
―
―
―
15
15
Typ.
1.65
−2
―
45
3
―
―
0.01
―
―
Max
1.85
―
10
―
500
5
50
1
―
―
μA
μA
V
V
Unit
V
mV / °C
μA
pF
nA
Coupled Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
IF
=
16 mA, VCC
=
4.5 V,
VO
=
0.4 V
IF
=
16 mA, VCC
=
4.5 V,
VO
=
0.4 V, Ta
=
0 to 70°C
I
F
=
16 mA, V
CC
=
4.5 V, I
O
=
2.4 mA
Min
20
15
―
Typ.
40
―
―
Max
―
%
―
0.4
V
Unit
Current transfer ratio
I
O
/I
F
Low level output voltage
V
OL
Isolation Characteristics
(Ta
=
25°C)
Characteristics
Capacitance (input-output)
Resistance (input-output)
(Note 7)
(Note 7)
Symbol
C
S
R
S
Test Condition
V
S
=
0V, f
=
1 MHz
R.H.
≤
60%, V
S
=
500 V
DC
AC, 1 minute
Isolation voltage
(Note 7)
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
―
5
×
10
10
2500
―
―
Typ.
0.8
10
14
―
5000
5000
Max
―
―
―
―
―
Unit
pF
Ω
Vrms
Vdc
Switching Characteristics
(Ta = 25°C、V
CC
= 5V)
Characteristic
Propagation delay time
(H→ L)
Propagation delay time
(L→ H)
Common mode transient immunity
at logic high output
(Note 8)
Common mode transient immunity
at logic high output
(Note 8)
Symbol
t
pHL
1
t
pLH
CM
H
2
CM
L
I
F
= 0mA, V
CM
= 400V
p−p
R
L
= 4.1kΩ
I
F
=16mA, V
CM
= 400V
p−p
R
L
= 4.1kΩ
I
F
= 16mA, R
L
= 1.9kΩ
―
2000
0.3
10000
0.8
―
―
μs
V /
μs
V /
μs
Test
Circuit
Test Condition
Min
―
Typ.
0.2
Max
0.8
Unit
μs
−2000 −10000
(Note 8) CM
L
is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage
in the logic low state (V
O
< 0.8V).
CM
H
is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state (V
O
> 2.0V).
3
2017-12-20
TLP559
Test Circuit 1: Switching Time Test Circuit
Pulse input
PW=100μs
Duty ratio=1 / 10
I
F
monitor
51
Ω
I
F
1
2
3
4
8
7
6
5
R
L
V
O
Output
monitor
1.5V
tpHL
tpLH
1.5V
V
OL
I
F
V
CC
= 5V
0
V
O
5V
Test Circuit 2: Common Mode Noise Immunity Test Circuit
V
CC
=5V
I
F
1
2
3
4
8
7
6
5
V
CM
Pulse generator
Z
O
=50Ω
320(V)
320(V)
CMH
=
,
CML
=
t r (
µ
s)
t f (
µ
s)
90%
V
CM
10%
400V
R
L
t
r
V
O
Output
monitor
V
O
(I
F
=0mA)
V
O
(I
F
=16mA)
t
f
0V
5V
2V
0.8V
V
OL
4
2017-12-20
TLP559
I
F
– V
F
100
50
30
Ta = 25°C
−2.6
ΔV
F
/
ΔTa
– I
F
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.0
Forward voltage temperature
coefficient
ΔV
F
/
ΔTa
(mV / °C)
−2.4
(mA)
−2.2
Forward current I
F
−2.0
−1.8
−1.6
1.2
1.4
1.6
1.8
2.0
−1.4
0.1
0.3
0.5
1
3
5
10
30
Forward voltage VF
(V)
Forward current I
F
I
F
(mA)
10
(mA)
I
OH
(1) – Ta
300
5
100
50
30
3
l
O
– I
F
VCC = 5V
VO = 0.4V
Ta = 25°C
Output current I
O
(mA)
High level output current
I
OH
(μA)
1
0.5
0.3
10
5
3
0.1
0.05
0.03
1
0.6
0
40
80
120
160
0.01
0.1
0.3 0.5
1
3
5
10
30 50 100
300
Ambient temperature Ta
(°C)
Forward current I
F
I
F
(mA)
(mA)
I
O
/ I
F
– I
F
100
VCC = 5V
VO = 0.4V
50
1.0
1.2
I
O
/ I
F
– Ta
Normalized I
O
/ I
F
30
Current transfer ratio
I
O
/ I
F
(%)
Ta =
–
25°C
0.8
10
25°C
100°C
0.6
Normalized To :
0.4
IF = 16mA
VCC = 4.5V
0.2
VO = 0.4V
Ta = 25°C
5
3
1
0.3
0.5
1
3
5
10
30
50
0
−40
−20
0
20
40
60
80
100
Forward current IF
(mA)
Ambient temperature Ta
(°C)
5
2017-12-20
京公网安备 11010802033920号
EEWORLD
