TLP2355
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP2355
1. Applications
•
•
•
Intelligent Power Module Signal Isolation
Programmable Logic Controllers (PLCs)
High-Speed Digital Interfacing for Instrumentation and Control Devices
2. General
The Toshiba TLP2355 consists of a GaAℓAs light-emitting diode coupled with a high-gain, high-speed photo
detector. It is housed in the SO6 package.
The detector has a totem-pole output stage with current sourcing and sinking capabilities.
The TLP2355 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of
±20
kV/µs.
The TLP2355 has a logic buffer output. An inverter output version, the TLP2358, is also available.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Buffer logic type (totem pole output)
Package: SO6
Supply voltage: 3 to 20 V
Threshold input current, low to high: I
FLH
= 1.6 mA (max)
Propagation delay time: 250 ns (max)
Pulse width distortion: 70 ns (max)
Common-mode transient immunity:
±20
kV/µs (min)
Operating temperature: -40 to 125
Isolation voltage: 3750 Vrms (min)
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
(10) Safety standards
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Start of commercial production
©2016 Toshiba Corporation
1
2011-09
2016-05-12
Rev.6.0
TLP2355
4. Packaging and Pin Configuration
1: Anode
3: Cathode
4: GND
5: V
O
(output)
6: V
CC
11-4L1S
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
Output
H
L
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
©2016 Toshiba Corporation
2
2016-05-12
Rev.6.0
TLP2355
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Peak transient input forward
current
Peak transient input forward
current derating
Input power dissipation
Input power dissipation
derating
Input reverse voltage
Detector Output current
Output current
Output voltage
Output power dissipation
Output power dissipation
derating
Supply voltage
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≤
25
)
(T
a
≥
25
)
(T
a
≤
25
)
(T
a
= 125
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
116
)
Symbol
I
F
∆I
F
/∆T
a
I
FPT
∆I
FPT
/∆T
a
P
D
∆P
D
/∆T
a
V
R
I
O
I
O
V
O
P
O
∆P
O
/∆T
a
V
CC
T
opr
T
stg
T
sol
BV
S
(Note 2)
(Note 1)
Note
Rating
20
-0.6
1
-25
40
-1.0
5
25/-15
5/-5
-0.5 to 20
75
-0.6
-0.5 to 20
-40 to 125
-55 to 125
260
3750
Vrms
V
mW
mW/
V
Unit
mA
mA/
A
mA/
mW
mW/
V
mA
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1
µs,
300 pps
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
(Note 2)
(Note 2)
Note
(Note 1)
Min
2
0
3
-40
Typ.
Max
10
0.8
20
125
Unit
mA
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
©2016 Toshiba Corporation
3
2016-05-12
Rev.6.0
TLP2355
9. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 3 to 20 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
V
OL
V
OH
(Note 1)
Note
Test
Circuit
Fig.
12.1.1
Fig.
12.1.2
Test Condition
I
F
= 10 mA, T
a
= 25
I
F
= 10 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz
I
O
= 3.5 mA, V
F
= 0.8 V
V
CC
= 3 V, I
O
= -2.6 mA,
I
F
= 5 mA
V
CC
= 20 V, I
O
= -2.6 mA,
I
F
= 5 mA
Low-level supply current
High-level supply current
I
CCL
I
CCH
Fig.
12.1.3
Fig.
12.1.4
(Note 2)
(Note 2)
Fig.
12.1.5
Fig.
12.1.6
V
CC
= 3.6 V, V
F
= 0 V
V
CC
= 20 V, V
F
= 0 V
V
CC
= 3.6 V, I
F
= 5 mA
V
CC
= 20 V, I
F
= 5 mA
V
CC
= V
O
= 3.6 V, V
F
= 0 V
V
CC
= V
O
= 20 V, V
F
= 0 V
V
CC
= 3.6 V, I
F
= 5 mA,
V
O
= GND
V
CC
= 20 V, I
F
= 5 mA,
V
O
= GND
Threshold input current (L/H)
Threshold input voltage (H/L)
Input current hysteresis
I
FLH
V
FHL
I
HYS
I
O
= -2.6 mA, V
O
> 2.4 V
I
O
= 3.5 mA, V
O
< 0.6 V
V
CC
= 5 V
Min
1.45
1.78
17.4
15
20
0.8
Typ.
1.55
-2.0
60
0.2
2.1
19.1
1.4
1.5
1.9
2.0
100
120
-14
-24
0.5
0.05
Max
1.70
10
0.6
3.0
3.0
3.0
3.0
-5
-10
1.6
V
mA
mA
Unit
V
mV/
µA
pF
V
Low-level short-circuit output
current
High-level short-circuit output
current
I
OSL
I
OSH
Note: All typical values are at T
a
= 25
.
Note 1: V
OH
= V
CC
- V
O
(V)
Note 2: Duration of output short circuit time should not exceed 10 ms.
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Conditions
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
©2016 Toshiba Corporation
4
2016-05-12
Rev.6.0
TLP2355
11. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 3 to 20 V)
Characteristics
Propagation delay time (L/H)
Propagation delay time (H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Rise time
Fall time
Common-mode transient
immunity at output high
Common-mode transient
immunity at output low
Symbol
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
r
t
f
CM
H
CM
L
Fig. 12.1.9
I
F
= 0
→
3 mA, V
CC
= 5 V
I
F
= 3
→
0 mA, V
CC
= 5 V
V
CM
= 1000 V
p-p
, I
F
= 5 mA,
V
CC
= 20 V, T
a
= 25
V
CM
= 1000 V
p-p
, I
F
= 0 mA,
V
CC
= 20 V, T
a
= 25
Note
Test Circuit
Test Condition
Min
-130
±20
±20
Typ.
100
120
20
15
12
±25
±25
Max
250
250
70
130
75
75
kV/µs
Unit
ns
Fig. 12.1.7, I
F
= 0
→
3 mA
Fig. 12.1.8
I
F
= 3
→
0 mA
I
F
= 3 mA
Note:
All typical values are at T
a
= 25
.
©2016 Toshiba Corporation
5
2016-05-12
Rev.6.0
Embedded System
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