TK10A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS
VII)
TK10A60D
Switching Regulator Applications
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 0.58
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 6.0 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max)
(V
DS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
10
40
45
363
10
4.5
150
-55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-67
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
1
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C (initial), L
=
6.36 mH, R
G
=
25
Ω,
I
AR
=
10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
Start of commercial production
2008-04
1
2013-11-01
TK10A60D
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
t
f
V
DD
≈
200 V
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
400 V, V
GS
=
10 V, I
D
=
10 A
Duty
≤
1%, t
w
=
10
μs
⎯
⎯
⎯
⎯
100
25
16
9
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
10 V
V
GS
0V
50
Ω
I
D
=
5
A
V
OUT
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±30
V, V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
5 A
V
DS
=
10 V, I
D
=
5 A
Min
⎯
⎯
600
2.0
⎯
1.5
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
0.58
6.0
1350
6
135
22
55
15
Max
±1
10
⎯
4.0
0.75
⎯
⎯
⎯
pF
Unit
μA
μA
V
V
Ω
S
⎯
⎯
⎯
⎯
⎯
⎯
⎯
ns
R
L
=
40
Ω
⎯
⎯
⎯
⎯
⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
10 A, V
GS
=
0 V
I
DR
=
10 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/μs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
1300
12
Max
10
40
−1.7
⎯
⎯
Unit
A
A
V
ns
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K10A60D
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament
and of the Council of 8 June 2011 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2013-11-01
TK10A60D
r
th
– t
w
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)
10
1
Duty = 0.5
Duty=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
0.01
SINGLE PULSE
T
Duty
=
t/T
Rth (ch-c)
=
2.78°C/W
10m
100m
1
10
0.001
10μ
100μ
1m
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
100
ID max (pulsed)
*
100
μs
*
10
I
D
max (continuous)
1 ms
*
400
500
E
AS
– T
ch
AVALANCHE ENERGY
E
AS
(mJ)
(A)
300
DRAIN CURRENT I
D
1
DC operation
Tc
=
25°C
0.1
200
100
0
25
0.01
*: SINGLE NONREPETITIVE PULSE
50
75
100
125
150
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
VDSS max
100
1000
0.001
TEMPERATURE.
10
1
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
DRAIN-SOURCE VOLTAGE
V
DS
(V)
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
6.36mH
WAVEFORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
5
2013-11-01
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