TLP190B
TOSHIBA Photocoupler
GaAℓAs IRED & Photo−Diode Array
TLP190B
Telecommunications
Programmable Controllers
MOS Gate Drivers
MOSFET Gate Drivers
Unit: mm
The TOSHIBA TLP190B mini-flat photocoupler is suitable for surface-
mount assembly.
The TLP190B consists of a GaAℓAs infrared light emitting diode optically
coupled to a series connected photodiode array which is suitable for
MOSFET gate drivers.
TLP190 : Mini Flat Package, 4Pin, one circuit.
•
•
•
•
•
Open voltage: 7.0V (min)
Short current: 12.0
μA
(min)
Isolation voltage: 2500 Vrms (min)
UL recognized: UL1577, file no. E67349
cUL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
TOSHIBA
11−4C1
Weight: 0.09 g (typ.)
Short Current
Type
Name
Short Current
Classification
(min)
C20
Standard
20
μA
12
μA
I
F
10 mA
Marking of
Classification
20
20, blank
Pin Configuration (top view)
TLP190B
1
6
Note: Application type name for certification test, please
use standard product type name, i.e.
TLP190B(C20) : TLP190B
3
1. Anode
3. Cathode
4. Cathode
6. Anode
4
Start of commercial production
1990-11
1
2017-06-05
TLP190B
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current
derating (Ta ≥ 25°C)
Pulse forward current
(100μs pulse 100pps)
LED
Reverse voltage
Diode power dissipation
Diode power dissipation derating
(Ta >25°C)
Junction temperature
Forward current
Detector
Reverse voltage
Output power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage
(AC, 1 minute, R.H. ≤ 60%)
Note 1
Symbol
I
F
ΔI
F
/°C
I
FP
V
R
△P
D
/°C
P
D
T
j
I
FD
V
RD
P
O
T
j
T
stg
T
opr
T
sol
BV
S
Rating
50
−0.5
1
3
100
-1.0
125
50
10
0.5
125
−55
to 125
−40
to 85
260
2500
Unit
mA
mA / °C
A
V
mW
mW/°C
°C
μA
V
mW
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Forward current
Operating temperature
Symbol
I
F
T
opr
Min
―
−25
Typ.
20
―
Max
25
85
Unit
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2017-06-05
TLP190B
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance between
terminals
Forward voltage
Detector
Reverse current
Capacitance
(anode to cathode)
Symbol
V
F
I
R
C
T
V
FD
I
RD
C
TD
Test Condition
I
F
= 10 mA
V
R
= 3 V
V
F
= 0V, f = 1 MHz
I
FD
= 10
μA
V
RD
= 10 V
V = 0V, f = 1 MHz
Min
1.2
—
—
―
―
—
Typ.
1.4
—
30
7
1
―
Max
1.7
10
60
—
—
—
Unit
V
μA
pF
V
nA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Open voltage
Short current
Symbol
V
OC
I
SC
Test Condition
I
F
= 10 mA
I
F
= 10 mA
Min
7
12
Typ.
8
20
Max
—
—
Unit
V
μA
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
C
S
R
S
BV
S
Test Condition
V
S
= 0V, f = 1 MHz
V
S
= 500 V, R.H. ≤ 60%
AC, 1 minute
Isolation voltage
AC, 1 second in oil
DC, 1 minute in oil
Min
—
5×10
10
Typ.
0.8
10
14
Max
—
—
—
—
—
Unit
pF
Ω
Vrms
Vdc
2500
—
—
—
5000
5000
Switching Characteristics
(Ta = 25°C)
Characteristic
Turn−on time
Turn−off time
Symbol
t
ON
t
OFF
Test Condition
I
F
= 20 mA, R
SH
= 510 kΩ
C
L
= 1000pF
(Note 1)
Min
—
—
Typ.
0.2
1
Max
—
—
Unit
ms
ms
Note 1: Switching time test circuit
I
F
R
SH
C
L
V
OUT
0V
R
SH:
External shunt resistance
t
ON
5V
1V
t
OFF
V
OUT
I
F
3
2017-06-05
TLP190B
100
I
F
– Ta
−4.0
−3.6
ΔV
F
/ΔTa – I
F
Allowable forward current
I
F
(mA)
80
Forward voltage temperature
Coefficient ΔVF /ΔTa (mV / °C)
−3.2
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
60
40
20
0
−20
0
20
40
60
80
100
0.1
0.3 0.5
1
3
10
30
Ambient temperature Ta (°C)
Forward current
I
F
(mA)
100
50
I
F
– V
F
Ta = 25 °C
5000
3000
I
FP
– D
R
Pulse width
≤
100μs
Ta = 25 °C
Pulse forward current I
FP
(mA)
(mA)
30
1000
500
300
Forward current I
F
10
5
3
100
50
30
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
10
0.0003
10
−
3
0.003
10
−
2
0.03
10
−
1
0.3
1
Forward voltage V
F
(V)
Duty cycle ratio D
R
4
2017-06-05
TLP190B
I
O
– V
O
Ta = 25 °C
40
100
30
10
3
1
0.3
0.1
0.03
6
8
10
0.01
10
2
3
t
ON,
t
OFF
– C
L
RSH=2.4MΩ
1MΩ
510kΩ
300kΩ
IF=20mA
R
SH
IF
VOUT
0V
tON
10
4
5V
tOFF
1V
tOFF
tON
Ta = 25 °C
IF = 20 mA
VOUT
CL
Output current I
O
(μA)
0
IF=0mA
5mA
10mA
15mA
−20
Switching time t
ON,
t
OFF
20
(ms)
−40
20mA
25mA
300kΩ
510kΩ
1MΩ
2.4MΩ
300
10
3000
−60
0
2
4
Output voltage
V
O
(V)
Load capacitance
C
L
(
P
F)
10
RSH OPEN
V
OC
– I
F
100
50
30
I
SC
– I
F
(V)
V
OC
1MΩ
6
510kΩ
(μA
)
Short current I
SC
Ta = 25 °C
300kΩ
8
10
Open voltage
3
4
1
0.5
0.3
0.1
1
Ta = 25 °C
3
5
10
30
50
100
2
RSH=2.4MΩ
0
1
3
5
10
30
50
100
Forward current
I
F
(mA)
Forward current
I
F
(mA)
12
V
OC
– Ta
24
I
SC
– Ta
(V)
10
20
V
OC
8
(μA
)
Short current I
SC
IF = 10mA
−20
0
20
40
60
80
100
120
16
Open voltage
6
12
4
8
2
0
4
0
IF = 10mA
−20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
5
2017-06-05
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