TLP550
TOSHIBA Photocoupler
Infrared LED
+
Photo IC
TLP550
Digital Logic Isolation
Line Receiver Feedback Control
Power Supply Control
Switching Power Supply
Transistor Inverter
TLP550 consists of a high emitting diode and a one chip photo diode−
transistor.
TLP550 has no base connection, and is suitable for application at noisy
environmental condition.
This unit is 8−lead DIP package.
Isolation voltage : 2500 Vrms (min)
Propagation delay time (t
pHL /
t
pLH)
:
t
pHL =
0.5μs (typ.)
,
t
pLH
= 0.6μs (typ.)
(R
L
=1.9 kΩ)
TTL compatible
UL recognized: UL1577, file No. E67349
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Unit: mm
Pin Configuration
(top view)
1
2
3
4
8
7
6
5
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : Emitter
6 : Collector
7 : N.C.
8 : Cathode
Schematic
I
CC
I
F
2
V
F
3
I
O
6
5
V
O
V
CC
8
GND
Start of commercial production
1981/09
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TLP550
Current Transfer Ratio
Classification
(None)
Rank O
Rank Y
Current Transfer Ratio (%)
(IC/IF)
Min
10
19
35
Max
―
―
―
Blank, O, Y
O
Y
Marking of Classification
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Pulse forward current
LED
Peak transient forward current
Reverse voltage
Diode power dissipation
Output current
Detector
Peak output current
Supply voltage
Output voltage
Output power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10s)
Isolation voltage (AC, 1minute, R.H. = 40 to 60%)
(Note 6)
(Note 5)
(Note 4)
(Note 1)
(Note 2)
(Note 3)
Symbol
I
F
I
FP
I
FPT
V
R
P
D
I
O
I
OP
V
CC
V
O
P
O
T
opr
T
stg
T
sol
BV
S
Rating
25
50
1
5
45
8
16
−0.5~15
−0.5~15
100
−55~100
−55~125
260
2500
Unit
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/
“Derating Concept and Methods”
) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
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TLP550
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Forward voltage
temperature coefficient
Reverse current
Capacitance between terminal
Symbol
V
F
∆V
F
/∆Ta
I
R
C
T
I
OH (1)
Detector
High level output current
I
OH (2)
I
OH
High level supply voltage
I
CCH
Test condition
I
F
= 16 mA
I
F
= 16 mA
V
R
= 5 V
V
F
= 0, f = 1MHz
I
F
= 0 mA, V
CC
= V
O
= 5.5 V
I
F
= 0 mA, V
CC
= V
O
= 15 V
I
F
= 0 mA, V
CC
= V
O
= 15 V
Ta = 70°C
I
F
= 0 mA, V
CC
= 15 V
Ta = 25°C
I
F
= 16 mA
V
CC
= 4.5 V
V
O
= 0.4 V
Rank: O
Rank: Y
Ta = 0~70°C
Rank: O, Y
Low level output voltage
V
OL
R
S
C
S
I
F
= 16 mA, V
CC
= 4.5 V
I
O
= 1.1 mA
(rank O: I
O
= 2.4mA)
R.H. = 40~60%, V = 1kV DC
(Note 6)
V = 0, f = 1MHz
Min
1.45
―
―
―
―
―
―
―
10
19
35
5
15
―
Typ.
1.65
−2
―
60
3
―
―
0.01
40
40
50
―
―
―
12
Max
1.85
―
10
―
500
5
50
1
―
―
Unit
V
mV / °C
μA
pF
nA
μA
μA
μA
Current transfer ratio
I
O
/ I
F
%
―
―
0.4
V
Coupled
Isolation resistance
Capacitance between
input to output
―
―
10
―
―
Ω
pF
0.8
Switching Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
I
F
= 0→ 16 mA, V
CC
= 5V, R
L
= 4.1 kΩ
t
pHL
(Note 7) Rank O: R
L
= 1.9 kΩ
I
F
= 16→ 0 mA, V
CC
= 5V, R
L
= 4.1 kΩ
t
pLH
(Note 7) Rank O: R
L
= 1.9 kΩ
I
F
= 0 mA, V
CM
= 200 V
p−p
C
MH
R
L
= 4.1 kΩ (rank O: R
L
= 1.9 kΩ)
(Note 8)
I
F
= 16 mA, V
CM
= 200 V
p−p
C
ML
R
L
= 4.1 kΩ (rank O: R
L
= 1.9 kΩ)
(Note 8)
―
−1500
―
V /μs
―
1500
―
V /μs
―
0.6
1.2
―
―
0.5
1.0
0.8
2.0
μs
Min
―
Typ.
0.3
Max
0.8
μs
Unit
Propagation delay time
(H→ L)
Propagation delay time
(L→ H)
Common mode transient
immunity at high output level
Common mode transient
immunity at low output level
(Note 6) Device considered two−terminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together.
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2014-09-01
TLP550
(Note 7) Switching time test circuit.
Pulse
input
I
F
1
2
3
4
8
7
6
5
R
L
V
CC
=5V
I
F
0
PW = 100μs
Duty ratio = 1 / 10
I
F
monitor
51Ω
V
O
Output
monitor
V
O
1.5V
t
pHL
t
pLH
5V
1.5V
V
OL
(Note 8) Common mode transient immunity test circuit.
1
I
F
2
3
4
8
7
6
5
V
CM
R
L
V
CC
=5V
V
CM
t
r
V
O
(I
F
= 0mA)
V
O
(I
F
= 16mA)
90%
10%
t
f
200V
0V
V
O
Output
monitor
5V
2V
0.8V
V
OL
Pulse gen
Z
O
=50Ω
CM
H
=
160 (V)
t
f
(μs)
, CM
L
=
160 (V)
t
f
(μs)
(Note 9) Maximum electrostatic discharge voltage for any pins: 100V (C = 200pF, R = 0)
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2014-09-01
TLP550
I
F
– V
F
100
50
30
Ta = 25°C
−2.6
∆V
F
/
∆Ta
– I
F
Forward voltage temperature
coefficient
∆V
F
/
∆Ta
(mV /
℃)
−2.4
(mA)
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
1.0
−2.2
Forward current I
F
−2.0
−1.8
−1.6
1.2
1.4
1.6
1.8
2.0
−1.4
0.1
0.3
0.5
1
3
5
10
30
Forward voltage VF
(V)
Forward current
I
F
(mA)
I
OH
(1) – Ta
300
10
5
l
O
– I
F
VCC = 5V
VO = 0.4V
Ta = 25°C
I
OH
(μA)
100
50
30
3
(mA)
1
0.5
0.3
High level output current
10
5
3
Output current
0
40
80
120
160
I
O
0.1
0.05
0.03
1
0.6
0.01
0.1
0.3 0.5
1
3
5
10
30 50 100
300
Ambient temperature
Ta (℃)
Forward current
I
F
(mA)
I
O
/ I
F
– I
F
100
50
30
VCC = 5V
VO = 0.4V
1.0
1.2
I
O
/ I
F
– Ta
Current transfer ratio
I
O
/ I
F
(%)
Ta =
−
25°C
100°C
Normalized I
O
/ I
F
0.8
10
0.6
Normalized To :
IF = 16mA
VCC = 4.5V
0.2
VO = 0.4V
Ta = 25°C
5
3
25°C
0.4
1
0.3
0.5
1
3
5
10
30
50
0
−40
−20
0
20
40
60
80
100
Forward current IF
(mA)
Ambient temperature Ta (℃)
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2014-09-01
Embedded System
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