TLP293-4
TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR
TLP293-4
Programmable Controllers
Switching Power Supplies
Simplex/Multiplex Data Transmissions
Unit: mm
TLP293-4 consists of phototransistors optically coupled to InGaAs infrared
emitting diodes.
TLP293-4 photocoupler is housed in the very small and thin SO16 package.
Since the TLP293-4 is guaranteed wide operating temperature range (Ta=-
55 to 125
˚C),
and high isolation voltage (3750 Vrms), it is suitable for high-
density surface mount applications such as programmable controllers.
Collector-Emitter Voltage
:
80 V (min)
Current Transfer Ratio
Isolation Voltage
Safety standards
UL-approved: UL1577, File No. E67349
cUL-approved: CSA Component Acceptance Service No.5A,
File No. E67349
CQC- approved
:
GB4943.1, GB8898
TLP293-4
:
50% (min)
:
3750 Vrms (min)
TOSHIBA
11-11F1
Weight: 0.19 g (typ.)
GB rank: 100% (min)
Operation temperature range: -55 to 125
˚C
Pin Configuration
仅适用干海拔
2000 m
以下地区安全½用
1
VDE-approved
:
EN60747-5-5 (Note)
Note :
When an EN60747-5-5 approved type is needed,
please designate the Option (V4).
2
3
4
Construction Mechanical Rating
5
Creepage Distance
Clearance
Internal isolation thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
16
15
14
13
12
11
10
9
6
7
8
1,3,5,7
:
Anode
2,4,6,8
:
Cathode
9,11,13,15
:
Emitter
10,12,14,16
:
Collector
Start of commercial production
2014-04
1
2015-10-21
TLP293-4
Current Transfer Ratio (Unless otherwise specified, Ta=25°C)
Current Transfer Ratio
(%)
Test condition
Min
Blank
I
F
= 5 mA, V
CE
= 5 V
GB
LA (Note2)
I
F
= 0.5 mA, V
CE
= 5 V
LGB (Note2)
100
600
LB
100
50
600
600
GB
LA
50
I
C
/ I
F
Max
600
Blank
Marking of Classification
Rank
(Note 1)
Note1: Specify both the part number and a rank in this format when ordering.
Example: rank GB: TLP293-4(GB,E
For safety standard certification, however, specify the part number alone.
TLP293−4 (GB,E: TLP293-4
Note2: The LA and LGB rank are made CTR rank of the low input current condition.
2
2015-10-21
TLP293-4
Absolute Maximum Ratings
(Note)(Unless otherwise specified, Ta = 25°C)
Characteristic
Input forward current
Input forward current derating (Ta≥50°C)
Input forward current(Pulsed)
LED
Power dissipation
Power dissipation derating(Ta≥50°C)
Input reverse voltage
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
DETECTOR
Collector current
Collector power dissipation
(1 Circuit)
Collector power dissipation derating(Ta≥25°C)
(1 Circuit)
Junction temperature
Operating temperature range
Storage temperature range
COMMON
Lead soldering temperature
Total power dissipation (1 Circuit)
Input power dissipation derating(Ta≥25°C) (1 Circuit)
Isolation Voltage
AC, 60s, R.H.≤60%
Symbol
I
F
∆I
F
/∆Ta
I
FP
P
D
∆P
D
/∆Ta
V
R
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/∆Ta
T
j
T
opr
T
stg
T
sol
P
T
∆P
T
/∆Ta
BV
S
(Note 2)
(Note 1)
Note
Rating
50
−0.59
1
70
-0.82
5
125
80
7
50
100
−0.91
125
−55
to 125
−55
to 125
260 (10s)
170
−1.55
3750
Unit
mA
mA /°C
A
mW
mW /°C
V
°C
V
V
mA
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: Pulse width
≤
100
μs,
frequency 100 Hz
Note2: This device is considered as a two-terminal device: All pins on the LED side are shorted together,
and all pin on the photodetector side are shorted together.
Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Input forward voltage
LED
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
DETECTOR
Emitter-collector breakdown voltage
Dark current
Collector-emitter capacitance
SYMBOL
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
DARK
C
CE
TEST CONDITION
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V,
V
CE
= 48 V, Ta = 85°C
V = 0 V, f = 1 MHz
MIN
1.1
—
—
80
7
—
—
—
TYP.
1.25
—
30
—
—
0.01
2
10
MAX
1.4
10
—
—
—
0.08
50
—
UNIT
V
μA
pF
V
V
μA
μA
pF
3
2015-10-21
TLP293-4
Coupled Electrical Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Rank GB
Off-state collector current
I
C (off)
V
F
= 0.7 V, V
CE
= 48 V
MIN
50
100
—
30
—
TYP.
—
—
60
—
—
0.2
—
—
MAX
600
%
600
—
—
0.3
—
0.3
10
μA
V
%
UNIT
Current transfer ratio
I
C
/ I
F
Saturated current transfer ratio
I
C
/ I
F (sat)
—
—
—
Isolation Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Total capacitance (input to output)
Isolation resistance
SYMBOL
C
S
R
S
TEST CONDITION
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.≤60%
AC , 60 s
Isolation voltage
BV
S
AC , 1 s in OIL
DC , 60 s in OIL
MIN
—
1×10
12
3750
—
—
TYP.
0.8
10
14
—
10000
10000
MAX
—
—
—
—
—
Vdc
UNIT
pF
Ω
Vrms
Switching Characteristics
(Unless otherwise specified, Ta = 25°C)
CHARACTERISTIC
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
SYMBOL
t
r
t
f
t
on
t
off
t
on
t
s
t
off
R
L
= 1.9 kΩ
(Figure 1)
V
CC
= 5 V, I
F
= 16 mA
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100
Ω
TEST CONDITION
MIN
—
—
—
—
—
—
—
TYP.
2
3
3
3
1.5
20
35
MAX
—
—
—
—
—
—
—
μs
μs
UNIT
Figure 1: Switching Time Test Circuit
I
F
R
L
V
CC
V
CE
I
F
V
CE
t
on
t
off
t
S
V
CC
4.5 V
0.5 V
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2015-10-21
TLP293-4
Characteristics Curves (Note)
I F - Ta
P C - Ta
Collector power dissipation P
C
(mW)
Input forward current
I F (mA)
This
curve
shows
the
maximum limit to the input
forward current.
This curve shows the maximum
limit to the collector power
dissipation.
Ambient temperature
Ta (˚C)
Ambient temperature
Ta (˚C)
IFP-DR
Pules width
≤100
μs
Ta=25˚C
IF-VF
Input forward current (pulsed)
I
FP
(mA)
Input forward current I
F
(mA)
This
curve
shows
the
maximum limit to the input
forward current (pulsed).
10
-3
10
-2
10
-1
10
0
125˚C
110˚C
85˚C
50˚C
25˚C
0˚C
-25˚C
-55˚C
Duty cycle ratio D
R
∆
V F /
∆
Ta - I F
Input forward current temperature coefficient
ΔV
F
/ΔTa (mV/°C)
Input forward current (pulsed) I
FP
(mA)
Input forward voltage
V
F
(V)
IFP – VFP
Pulse width
≤10
μs
Repetitive frequency=100 Hz
Ta=25°C
Input forward current
I
F
(mA)
Input forward voltage (pulsed) V
FP
(V)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
5
2015-10-21
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