TLPN137
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLPN137
1. Applications
•
•
•
Factory Automation (FA)
High-Speed Digital Interfacing
Measurement Instrumentation
2. General
The Toshiba TLPN137 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,
high-speed photodetectors. It is housed in the DIP8 package. The TLPN137 succeeds the 6N137 which has been
released. The characteristics of the TLPN137 are similar as the 6N137. The TLPN137 has an internal Faraday
shield that provides a guaranteed common-mode transient immunity of 10 kV/µs.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Inverter logic type (open collector output)
Package: DIP8
Operating temperature: -40 to 85
Supply voltage: 4.5 to 5.5 V
Data transfer rate: 10 MBd (typ.) (NRZ)
Threshold input current: 5.0 mA (max)
Supply current: 4 mA (max)
Common-mode transient immunity:
±10
kV/µs (min)
Isolation voltage: 5000 Vrms (min)
UL-under application: UL1577 File No.E67349
cUL-under application: CSA Component Acceptance Service No.5A, File No.E67349
VDE-under application: Option (D4) EN60747-5-2
(10) Safety standards
4. Packaging and Pin Configuration
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: GND
6: V
O
(Output)
7: N.C.
8: V
CC
11-10C4S
1
2011-08-30
Rev.1.0
TLPN137
5. Internal Circuit
Fig. 5.1 Internal Circuit
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
Output
L
H
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
7.0
7.0
0.4
Unit
mm
2
2011-08-30
Rev.1.0
TLPN137
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
25
Characteristics
LED
Input forward current
Input forward current (pulsed)
Peak transient input forward
current
Input power dissipation
Input reverse voltage
Detector Output current
Output voltage
Supply voltage
Output power dissipation
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 1 min, R.H.
≤
60%
Symbol
I
F
I
FP
I
FPT
P
D
V
R
I
O
V
O
V
CC
P
O
T
opr
T
stg
T
sol
BV
S
(Note 3)
(Note 1)
(Note 2)
Note
Rating
20
40
1
40
5
50
6
6
85
-40 to 85
-55 to 125
260
5000
Vrms
mW
A
mW
V
mA
V
Unit
mA
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1 ms, duty = 50%
Note 2: Pulse width (PW)
≤
1
µs,
300 pps
Note 3: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
Note:
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
(Note 2)
(Note 2)
Note
(Note 1)
Min
6.3
0
4.5
-40
Typ.
5.0
Max
15
0.8
5.5
85
Unit
mA
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 8 and pin 5 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
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2011-08-30
Rev.1.0
TLPN137
9. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 85
, V
CC
= 4.5 to 5.5 V)
85
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
High-level output current
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
I
OH
Note
Test
Circuit
Fig.
12.1.1
Test Condition
I
F
= 10 mA, T
a
= 25
I
F
= 10 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
V
F
= 0.8 V, V
O
= 5.5 V,
V
CC
= 5.5 V
V
F
= 0.8 V, V
O
= 5.5 V,
V
CC
= 5.5 V, T
a
= 25
Low-level output voltage
High-level supply current
Low-level supply current
Threshold input current (H/L)
V
OL
I
CCH
I
CCL
I
FHL
Fig.
12.1.2
Fig.
12.1.3
Fig.
12.1.4
I
F
= 5 mA
I
O
= 13 mA (Sinking)
I
F
= 0 mA
I
F
= 10 mA
I
O
= 13 mA (Sinking),
V
O
< 0.6 V
Min
1.45
Typ.
1.55
-2.0
60
0.23
1.6
1.8
1.3
Max
1.7
10
50
10
0.6
4.0
4.0
5.0
V
mA
Unit
V
mV/
µA
pF
µA
Note:
All typical values are at T
a
= 25.
25
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Conditions
Min
1×10
12
5000
Typ.
1.0
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60%
(Note 1) AC, 1 min
AC, 1 s in oil
DC, 1 min in oil
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
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2011-08-30
Rev.1.0
TLPN137
11. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 85
, V
CC
= 4.5 to 5.5 V
85
Characteristics
Propagation delay time
(H/L)
Symbol
t
pHL
Note
(Note 1)
Test
Circuit
Fig.
12.1.5
Test Condition
I
F
= 0→7.5 mA, R
L
= 350
Ω,
C
L
= 15 pF, Ta= 25
I
F
= 0→7.5 mA, R
L
= 350
Ω,
C
L
= 15 pF
Propagation delay time
(L/H)
t
pLH
(Note 1)
I
F
= 7.5→0 mA, R
L
= 350
Ω,
C
L
= 15 pF, Ta = 25
I
F
= 7.5→0 mA, R
L
= 350
Ω,
C
L
= 15 pF
Pulse width distortion
Propagation delay skew
(device to device)
Fall time
Rise time
Common-mode transient
immunity at output high
Common-mode transient
immunity at output low
|t
pHL
-
t
pLH
|
t
psk
t
f
t
r
CM
H
CM
L
(Note 1)
(Note 1),
(Note 2)
(Note 1)
(Note 1)
Fig.
12.1.6
I
F
= 0
→
7.5 mA, R
L
= 350
Ω,
C
L
= 15 pF
I
F
= 7.5
→
0 mA, R
L
= 350
Ω,
C
L
= 15 pF
V
CM
= 1000 V
p-p
,
I
F
= 0 mA, V
CC
= 5 V, T
a
= 25
V
CM
= 1000 V
p-p
,
I
F
= 10 mA, V
CC
= 5 V, T
a
= 25
I
F
= 7.5 mA, R
L
= 350
Ω,
C
L
= 15 pF
Min
-40
±10
±10
Typ.
35
25
3
12
±15
±15
Max
75
100
75
100
35
40
kV/µs
Unit
ns
Note: All typical values are at T
a
= 25.
Note 1: f = 5 MHz, duty = 50%, input current t
r
= t
f
= 5 ns, C
L
is approximately 15 pF which includes probe and stray
wiring capacitance.
Note 2: The propagation delay skew, t
psk
, is equal to the magnitude of the worst-case difference in t
pHL
and/or t
pLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
5
2011-08-30
Rev.1.0
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