TLP151A
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP151A
1. Applications
•
•
•
Transistor Inverters
MOSFET Gate Drivers
IGBT Gate Drivers
2. General
The TLP151A is a photocoupler in a SO6 package that consists of a GaAℓAs infrared light-emitting diode (LED)
optically coupled to an integrated high-gain, high-speed photodetector IC chip.
The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity.
TLP151A is suitable for direct gate driving circuit for small capacity IGBTs or power MOSFETs.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Buffer logic type (Totem pole output)
Package type: SO6
Output peak current:
±0.6
A (max)
Operating temperature: -40 to 110
Supply voltage: 10 to 30 V
Threshold input current: 5.0 mA(max)
Propagation delay time: 500 ns (max)
Common-mode transient immunity:
±20
kV/µs (min)
Isolation voltage: 3750 Vrms (min)
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5 (Note 1)
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)
(V4).
(10) Safety standards
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: GND
5: V
O
(Output)
6: V
CC
11-4L1S
Start of commercial production
©2015 Toshiba Corporation
1
2011-05
2017-06-09
Rev.4.0
TLP151A
5. Internal Circuit (Note)
Fig. 5.1 Internal Circuit
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
M1
ON
OFF
M2
OFF
ON
Output
H
L
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
©2015 Toshiba Corporation
2
2017-06-09
Rev.4.0
TLP151A
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input forward current derating (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Detector Peak high-level output current
Peak low-level output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s,
R.H.
≤
60 %
(T
a
≥
95
)
(T
a
≥
95
)
(T
a
≥
95
)
(T
a
≥
95
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
∆I
FP
/∆T
a
V
R
P
D
∆P
D
/∆T
a
I
OPH
I
OPL
V
O
V
CC
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 3)
(Note 4)
(Note 2)
(Note 2)
(Note 1)
Note
Rating
25
-0.67
1
-25
5
40
-1.0
-0.6
+0.6
35
35
80
-2.0
-40 to 110
-55 to 125
260
3750
Unit
mA
mA/
A
mA/
V
mW
mW/
A
A
V
V
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1
µs,
300 pps
Note 2: Exponential waveform. Pulse width
≤
2
µs,
f
≤
10 kHz, Duty = 50 %
Note 3:
≥
2 mm below seating plane.
Note 4: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Peak high-level output current
Peak low-level output current
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
I
OPH
I
OPL
T
opr
(Note 1)
Note
Min
7.5
0
10
-40
Typ.
Max
15
0.8
30
-0.2
+0.2
110
Unit
mA
V
V
A
A
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: Denotes the operating range, not the recommended operating condition.
Note:
©2015 Toshiba Corporation
3
2017-06-09
Rev.4.0
TLP151A
9. Electrical Characteristics (Note) (Unless otherwise specified, T
a
= -40 to 100
)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Peak high-level output current
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
I
OPH
(Note 1)
Fig.
12.1.1
Note
Test
Circuit
Test Condition
I
F
= 10 mA, T
a
= 25
I
F
= 10 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
I
F
= 5 mA, V
CC
= 15 V,
V
6-5
= 4 V
I
F
= 5 mA, V
CC
= 15 V,
V
6-5
= 10 V
Peak low-level output current
I
OPL
(Note 1)
Fig.
12.1.2
I
F
= 0 mA, V
CC
= 15 V,
V
5-4
= 2 V
I
F
= 0 mA, V
CC
= 15 V,
V
5-4
= 10 V
High-level output voltage
Low-level output voltage
High-level supply current
Low-level supply current
Threshold input current (L/H)
Threshold input voltage (H/L)
Supply voltage
V
OH
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
V
CC
Fig.
12.1.3
Fig.
12.1.4
Fig.
12.1.5
Fig.
12.1.6
I
F
= 5 mA, V
CC
= 10 V,
I
O
= -100 mA
V
F
= 0.8 V, V
CC
= 10 V,
I
O
= 100 mA
I
F
= 10 mA, V
CC
= 10 to 30 V,
V
O
= Open
I
F
= 0 mA, V
CC
= 10 to 30 V,
V
O
= Open
V
CC
= 15 V, V
O
> 1 V
V
CC
= 15 V, V
O
< 1 V
Min
1.45
0.2
0.4
6.0
0.8
10
Typ.
1.55
-2.0
60
8.5
0.35
Max
1.7
10
-0.2
-0.4
1.0
2.0
2.0
5.0
30
V
mA
V
Unit
V
mV/
µA
pF
A
Note:
Note:
All typical values are at T
a
= 25
.
This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.
Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.
Note 1: I
O
application time
≤
50
µs,
single pulse.
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s.
AC, 1 s in oil
DC, 60 s. in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
©2015 Toshiba Corporation
4
2017-06-09
Rev.4.0
TLP151A
11. Switching Characteristics (Note) (Unless otherwise specified, T
a
= -40 to 100
)
Characteristics
Propagation delay time
(L/H)
Propagation delay time
(H/L)
Propagation delay time
(L/H)
Propagation delay time
(H/L)
Pulse width distortion
Rise time
Fall time
Common-mode transient
immunity at output high
Common-mode transient
immunity at output low
Symbol
t
pLH
Note
Test
Circuit
Fig.
12.1.7
Test Condition
I
F
= 0
→
5 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF,
T
a
= 25
I
F
= 5
→
0 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF,
T
a
= 25
I
F
= 0
→
5 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF
I
F
= 5
→
0 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF
Fig.
12.1.7
I
F
= 0
←→
5 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF
I
F
= 0
→
5 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF
I
F
= 5
→
0 mA, V
CC
= 30 V,
R
g
= 47
Ω,
C
g
= 3 nF
(Note1)
Fig.
12.1.8
V
CM
= 1000 V
p-p
, I
F
= 5 mA,
V
CC
= 30 V, T
a
= 25
,
V
O(min)
= 26 V
V
CM
= 1000 V
p-p
, I
F
= 0 mA,
V
CC
= 30 V, T
a
= 25
,
V
O(max)
= 1 V
Min
Typ.
Max
450
Unit
ns
t
pHL
450
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
r
t
f
CM
H
30
30
±20
50
50
500
500
350
kV/µs
ns
CM
L
±20
Note: All typical values are at T
a
= 25
.
Note1: CM
H
is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state (V
O
> 26 V).
CM
L
is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in
the logic low state (V
O
< 1 V).
©2015 Toshiba Corporation
5
2017-06-09
Rev.4.0
stm32/stm8
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