TLP3109
Photocouplers
Photorelay
TLP3109
1. Applications
•
•
•
•
•
Mechanical relay replacements
Security Systems
Measuring Instruments
Factory Automation (FA)
Amusement Equipment
2. General
The TLP3109 photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It is
housed in a 2.54SOP6 package. The low ON-state resistance and the high permissible ON-state current of the
TLP3109 make it suitable for power line control applications.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Normally opened (1-Form-A)
OFF-state output terminal voltage: 100 V (min)
Trigger LED current: 3 mA (max)
ON-state current: 2.0 A (max) (A connection)
ON-state resistance: 70 mΩ (max) (A connection)
Isolation voltage: 1500 Vrms (min)
Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
4. Packaging and Pin Assignment
1: Anode
2: Cathode
3: N.C.
4: Drain
5: Source
6: Drain
11-7C1S
Start of commercial production
©2017 Toshiba Corporation
1
2015-05
2017-04-20
Rev.2.0
TLP3109
5. Internal Circuit
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector OFF-state output terminal voltage
ON-state current (A connection)
ON-state current (B connection)
ON-state current (C connection)
ON-state current derating (A connection)
ON-state current derating (B connection)
ON-state current derating (C connection)
ON-state current (pulsed)
Output power dissipation
Output power dissipation derating
Junction temperature
Common Storage temperature
Operating temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
≥
25
)
(T
a
≥
25
)
(t = 100 ms, Duty = 1/10)
(T
a
≥
25
)
(T
a
≥
25
)
(100
µs
pulse, 100 pps)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
OFF
I
ON
I
ON
I
ON
∆I
ON
/∆T
a
∆I
ON
/∆T
a
∆I
ON
/∆T
a
I
ONP
P
O
∆P
O
/∆T
a
T
j
T
stg
T
opr
T
sol
BV
S
(Note 2)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Note
Rating
30
-0.3
1
5
50
-0.5
125
100
2.0
2.0
4.0
-20
-20
-40
6
400
-4.0
125
-55 to 125
-40 to 85
260
1500
Vrms
A
mW
mW/
mA/
Unit
mA
mA/
A
V
mW
mW/
V
A
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: For an application circuit example, see Chapter 12.2.
Note 2: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2017 Toshiba Corporation
2
2017-04-20
Rev.2.0
TLP3109
7. Recommended Operating Conditions (Note)
Characteristics
Supply voltage
Input forward current
ON-state current (A connection)
Operating temperature
Symbol
V
DD
I
F
I
ON
T
opr
Note
Min
5
-20
Typ.
10
Max
80
25
2.0
65
Unit
V
mA
A
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
8. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
V
F
I
R
C
t
I
OFF
C
OFF
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
V
OFF
= 100 V
V
OFF
= 80 V
V = 0 V, f = 1 MHz
Min
1.18
Typ.
1.33
70
500
Max
1.48
10
1
20
Unit
V
µA
pF
µA
nA
pF
9. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Trigger LED current
Return LED current
ON-state resistance (A connection)
ON-state resistance (B connection)
ON-state resistance (C connection)
I
ON
= 4.0 A, I
F
= 5 mA, t < 1 s
Symbol
I
FT
I
FC
R
ON
Note
Test Condition
I
ON
= 100 mA
I
OFF
= 10
µA
(Note 1) I
ON
= 2.0 A, I
F
= 5 mA, t < 1 s
Min
0.1
Typ.
0.4
45
22
11
Max
3
70
35
18
mΩ
Unit
mA
Note 1: For an application circuit example, see Chapter 12.2.
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
5
×
10
10
1500
Typ.
0.8
10
14
3000
3000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s, in oil
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2017 Toshiba Corporation
3
2017-04-20
Rev.2.0
TLP3109
11. Switching Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Turn-on time
Symbol
t
ON
Note
Test Condition
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 5 mA
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 10 mA
Turn-off time
t
OFF
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 5 mA
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 10 mA
Min
Typ.
1.1
0.6
0.1
0.1
Max
5.0
3.0
1.0
1.0
Unit
ms
Fig. 11.1 Switching Time Test Circuit and Waveform
©2017 Toshiba Corporation
4
2017-04-20
Rev.2.0
TLP3109
12. Characteristics Curves and Circuit Connections
12.1. Characteristics Curves (Note)
Fig. 12.1.1 I
F
- T
a
Fig. 12.1.2 I
ON
- T
a
Fig. 12.1.3 I
F
- V
F
Fig. 12.1.4 I
ON
- V
ON
Fig. 12.1.5 R
ON
- T
a
Fig. 12.1.6 I
FT
- T
a
©2017 Toshiba Corporation
5
2017-04-20
Rev.2.0
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