TLP2345
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP2345
1. Applications
•
•
•
Intelligent Power Module Signal Isolation
Programmable Logic Controllers (PLCs)
High-Speed Digital Interfacing for Instrumentation and Control Devices
2. General
The Toshiba TLP2345 consists of high-output GaAℓAs light-emitting diode coupled with a high-gain, high-speed
photo detector. It is housed in the SO6 package.
This product can operate in power supply voltage 4.5 V to 30 V with the maximum operative temperature of 110
.
Since TLP2345 has guaranteed 3 mA low supply current (I
CCL
/I
CCH
), and 1.6 mA low threshold input current
(I
FLH
), it contributes to energy saving of devices. It can drive directly from a microcomputer for a low input
current. The detector has a totem-pole output stage with current sourcing and sinking capabilities. The TLP2345
has an internal Faraday shield that provides a guaranteed common-mode transient immunity of
±30
kV/µs. The
TLP2345 has a buffer output. An inverter output version, the TLP2348, is also available.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Buffer logic type (Totem pole output)
Package: SO6
Operating temperature: -40 to 110
Supply voltage: 4.5 to 30 V
Threshold input current: 1.6 mA (max)
Supply current: 3 mA (max)
Propagation delay time: 120 ns (max)
Pulse width distortion: 40 ns (max)
Common-mode transient immunity:
±30
kV/µs (min)
(10) Isolation voltage: 3750 Vrms (min)
(11) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Start of commercial production
©2016 Toshiba Corporation
1
2013-11
2016-01-22
Rev.3.0
TLP2345
4. Packaging and Pin Configuration
1: Anode
3: Cathode
4: GND
5: V
O
(Output)
6: V
CC
11-4L1S
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
Output
H
L
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
©2016 Toshiba Corporation
2
2016-01-22
Rev.3.0
TLP2345
7. Absolute Maximum Ratings (Note)
(Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Peak transient input forward current
Input power dissipation
Input reverse voltage
Detector Output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
75
)
(Ta
≥
110
)
Symbol
I
F
∆I
F
/∆T
a
I
FPT
P
D
V
R
I
O
V
O
V
CC
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 2)
(Note 1)
Note
Rating
15
-0.33
1
40
5
50 / -50
-0.5 to 30
-0.5 to 30
100
-2
-40 to 110
-55 to 125
260
3750
Unit
mA
mA/
A
mW
V
mA
V
V
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1
µs,
300 pps
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
(Note 2)
(Note 2)
Note
(Note 1)
Min
2
0
4.5
-40
Typ.
Max
10
0.8
30
110
Unit
mA
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
©2016 Toshiba Corporation
3
2016-01-22
Rev.3.0
TLP2345
9. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 110
, V
CC
= 4.5 to 30 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Low-level supply current
High-level supply current
Low-level short-circuit output
current
High-level short-circuit output
current
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
V
OL
V
OH
I
CCL
I
CCH
I
OSL
I
OSH
Test
Circuit
Fig.
12.1.1
Fig.
12.1.2
Fig.
12.1.3
Fig.
12.1.4
Fig.
12.1.5
Fig.
12.1.6
Test Condition
I
F
= 3 mA, T
a
= 25
I
F
= 3 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
V
F
= 0.8 V, I
O
= 3.5 mA
V
F
= 0.8 V, I
O
= 6.5 mA
I
F
= 3 mA, I
O
= -3.5 mA
I
F
= 3 mA, I
O
= -6.5 mA
V
CC
= 5.5 V
V
CC
= 30 V
I
F
= 3 mA, V
CC
= 5.5 V
I
F
= 3 mA, V
CC
= 30 V
V
CC
= V
O
= 5.5 V
V
CC
= V
O
= 20 V
I
F
= 3 mA, V
CC
= 5.5 V,
V
O
= GND
I
F
= 3 mA, V
CC
= 20 V,
V
O
= GND
Threshold input current (L/H)
Input current hysteresis
Threshold input voltage (H/L)
I
FLH
I
HYS
V
FHL
I
O
= -3.5 mA, V
O
> 4.8 V,
V
CC
= 5 V
I
O
= -3.5 mA
I
O
= 6.5 mA, V
O
< 0.4 V
Min
1.35
V
CC
- 0.2
V
CC
- 0.4
150
160
0.8
Typ.
1.55
-2.0
20
0.026
0.047
V
CC
- 0.03
V
CC
- 0.05
2.1
2.4
2.1
2.4
270
300
-330
-350
0.35
0.1
Max
1.65
10
0.2
0.4
3
3
3
3
-150
-160
1.6
V
mA
Unit
V
mV/
µA
pF
V
Note:
All typical values are at V
CC
= 5 V, T
a
= 25
,
unless otherwise noted.
10. Isolation Characteristics
(Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V = 0 V, f = 1 MHz
(Note 1) V = 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
©2016 Toshiba Corporation
4
2016-01-22
Rev.3.0
TLP2345
11. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 110
, V
CC
= 4.5 to 30 V)
Characteristics
Propagation delay time (H/L)
Symbol
t
pHL
Note
(Note 1)
Test
Circuit
Test Condition
Min
35
35
-70
±30
±30
Typ.
61
65
4
3
3
±50
±50
Max
120
120
40
70
30
30
kV/µs
Unit
ns
Fig. I
F
= 3
→
0 mA
12.1.7, I = 0
→
3 mA
Propagation delay time (L/H)
t
pLH
F
Fig.
Pulse width distortion
|t
pHL
-t
pLH
|
12.1.8 I
F
= 3 mA
Propagation delay skew
t
psk
(Note 1),
I
F
= 3 mA
(device to device)
(Note 2)
Fall time
Rise time
Common-mode transient
immunity at output high
Common-mode transient
immunity at output low
t
f
t
r
CM
H
CM
L
(Note 1)
I
F
= 3
→
0 mA
I
F
= 0
→
3 mA
Fig. I
F
= 3 mA, V
CC
= 30 V,
12.1.9 V
CM
= 1500 V
p-p
, T
a
= 25
I
F
= 0 mA, V
CC
= 30 V,
V
CM
= 1500 V
p-p
, T
a
= 25
Note: All typical values are at V
CC
= 5 V, T
a
= 25
,
unless otherwise noted.
Note 1: f = 50 kHz, duty = 50 %, input current t
r
= t
f
= 5 ns, C
L
is approximately 15 pF which includes probe and stray
wiring capacitance.
Note 2: The propagation delay skew, t
psk
, is equal to the magnitude of the worst-case difference in t
pHL
and/or t
pLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
©2016 Toshiba Corporation
5
2016-01-22
Rev.3.0
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