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BAT46W-E3-08

Description
DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1V @ 250mA 100V, 0.15A, VF=1V@250mA
CategoryDiscrete semiconductor    Schottky diode   
File Size80KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BAT46W-E3-08 Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1V @ 250mA 100V, 0.15A, VF=1V@250mA

BAT46W-E3-08 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)100V
Average rectified current (Io)150mA
Forward voltage drop (Vf)1V @ 250mA
BAT46W
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• For general purpose applications
• This diode features very low turn-on voltage
and fast switching
• This device is protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PARTS TABLE
PART
BAT46W
ORDERING CODE
BAT46W-E3-08 or BAT46W-E3-18
BAT46W-HE3-08 or BAT46W-HE3-18
INTERNAL
CONSTRUCTION
Single Diode
TYPE MARKING
L6
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
Surge forward current
(1)
Power dissipation
(1)
(1)
TEST CONDITION
SYMBOL
V
RRM
I
F
VALUE
100
150
350
750
150
UNIT
V
mA
mA
mA
mW
t
p
< 1 s,
< 0.5
t
p
< 10 ms
T
amb
= 65 °C
I
FRM
I
FSM
P
tot
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Operating temperature range
Storage temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
TEST CONDITION
SYMBOL
R
thJA
T
j
T
op
T
stg
VALUE
300
125
- 55 to + 125
- 55 to + 150
UNIT
K/W
°C
°C
°C
Rev. 1.9, 25-Feb-13
Document Number: 85663
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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