b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S13-2282-Rev. G, 04-Nov-13
Document Number: 72440
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7463DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= -4.5 A, dI/dt = 100 A/μs
V
DD
= -20 V, R
L
= 20
I
D
-1 A, V
GEN
= -10 V, R
g
= 6
V
DS
= -20 V, V
GS
= -10 V, I
D
= -18.6 A
-
-
-
-
-
-
-
-
-
121
19.2
30.3
2.7
20
25
200
100
45
140
-
-
-
30
40
300
150
70
ns
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= -40 V, V
GS
= 0 V
V
DS
= -40 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-5 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -18.6 A
V
GS
= -4.5 V, I
D
= -15 A
V
DS
= -15 V, I
D
= -18.6 A
I
S
= -4.5 A, V
GS
= 0 V
-1
-
-
-
-40
-
-
-
-
-
-
-
-
-
0.0075
0.0110
50
-0.8
-3
± 100
-1
-10
-
0.0092
0.0140
-
-1.2
V
nA
μA
A
S
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2282-Rev. G, 04-Nov-13
Document Number: 72440
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7463DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10 V thru 4 V
60
Vishay Siliconix
50
I
D
- Drain Current (A)
50
I
D
- Drain Current (A)
40
40
30
30
20
3V
20
T
C
= 125 °C
10
25 °C
- 55 °C
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.016
0.014
R
DS(on)
- On-Resistance (
)
0.012
V
GS
= 4.5 V
0.010
0.008
0.006
0.004
0.002
0.000
0
10
20
30
40
50
60
V
GS
= 10 V
C - Capacitance (pF)
8000
7000
6000
5000
4000
3000
2000
Transfer Characteristics
C
iss
C
oss
1000
C
rss
0
0
8
16
24
32
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 18.6 A
8
1.6
V
GS
= 10 V
I
D
= 18.6 A
1.4
Capacitance
6
1.2
4
1.0
2
0.8
0
0
25
50
75
100
125
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
S13-2282-Rev. G, 04-Nov-13
On-Resistance vs. Junction Temperature
Document Number: 72440
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7463DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.04
Vishay Siliconix
R
DS(on)
- On-Resistance ( )
I
S
- Source Current (A)
0.03
I
D
= 18.6 A
0.02
I
D
= 5 A
T
J
= 150 °C
10
T
J
= 25 °C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8
100
On-Resistance vs. Gate-to-Source Voltage
0.6
I
D
= 250 µA
V
GS(th)
Variance (V)
0.4
Power (W)
- 25
0
25
50
75
100
125
150
80
60
0.2
40
0.0
20
0.2
0.4
- 50
0
0.01
0.1
1
Time (s)
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
I
D
- Drain Current (A)
P(t) = 0.001
P(t) = 0.01
1
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
P(t) = 10
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S13-2282-Rev. G, 04-Nov-13
Document Number: 72440
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72440.
S13-2282-Rev. G, 04-Nov-13
Document Number: 72440
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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