TCMT110. Series
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, Single Channel,
Half Pitch Mini-Flat Package
C
4
E
3
FEATURES
• Low profile package (half pitch)
• AC isolation test voltage 3750 V
RMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) selected into groups
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
A
22628-1
2
C
DESCRIPTION
The TCMT110. series consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4 pin package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
APPLICATIONS
• Programmable logic controllers
• Modems
• Answering machines
• General applications
AGENCY APPROVALS
• UL1577, file no. E76222, double protection
• cUL component acceptance service no. 5A, double
protection
• DIN EN 60747-5-5 (VDE 0884-5)
• FIMKO: FI EN 60950-1:2006
• BSI: BS EN60065:2002
BS EN60950-1:2006
• CQC GB 8898-2011, GB 4943.1-2011 (suitable for
installation altitude below 2000 m)
ORDERING INFORMATION
SSOP-4
T
C
M
T
1
1
0
#
7.21 mm
PART NUMBER
AGENCY CERTIFIED/
PACKAGE
UL, cUL, FIMKO,
BSI, VDE
SSOP-4
CTR (%)
5 mA
50 to 600
40 to 80
10 mA
5 mA
63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
TCMT1100 TCMT1101 TCMT1102 TCMT1103 TCMT1104 TCMT1105 TCMT1106 TCMT1107 TCMT1108 TCMT1109
Note
• Available only on tape and reel.
Rev. 3.0, 10-Mar-16
Document Number: 83510
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT110. Series
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
≤
10 μs
I
FSM
P
diss
T
j
V
CEO
V
ECO
I
C
t
p
/T = 0.5, t
p
≤
10 ms
I
CM
P
diss
T
j
Related to standard climate 23/50
DIN 50014
VALUE
6
60
1.5
100
125
70
7
50
100
150
125
UNIT
V
mA
A
mW
°C
V
V
mA
mA
mW
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Operating ambient temperature range
Storage temperature range
Soldering temperature
(1)
V
ISO
P
tot
T
amb
T
stg
T
sld
3750
250
- 40 to + 100
- 40 to + 125
260
V
RMS
mW
°C
°C
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices. Also refer to “Assembly Instructions”
(www.vishay.com/doc?80054).
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
Ω
f = 1 MHz
V
CEsat
f
c
C
k
100
0.3
0.3
V
kHz
pF
I
C
= 100 μA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0 A
V
CEO
V
ECO
I
CEO
70
7
100
V
V
nA
I
F
= 50 mA
V
R
= 0, f = 1 MHz
V
F
C
j
1.35
8
1.6
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 3.0, 10-Mar-16
Document Number: 83510
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT110. Series
www.vishay.com
Vishay Semiconductors
PART
TCMT1100
TCMT1101
TCMT1102
TCMT1103
TCMT1104
TCMT1105
TCMT1106
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
40
63
100
160
50
100
80
130
200
TYP.
MAX.
600
80
125
200
320
150
300
160
260
400
UNIT
%
%
%
%
%
%
%
%
%
%
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
V
CE
= 5 V, I
F
= 5 mA
V
CE
= 5 V, I
F
= 10 mA
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
TCMT1107
TCMT1108
TCMT1109
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
I
F
0
I
F
TEST CONDITION
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
C
= 2 mA, R
L
= 100
Ω,
(see figure 1)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see figure 2)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 kΩ, (see figure 2)
+5V
I
C
= 2 mA; adjusted through
input amplitude
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
TYP.
4.0
5.5
7.0
1.5
9.5
8.5
3.0
20.0
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
I
F
0
I
C
100 %
90 %
t
p
t
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10804
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
100
Ω
t
Fig. 1 - Test Circuit, Non-Saturated Operation
I
F
0
I
F
= 10 mA
+5V
I
C
Fig. 3 - Switching Times
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 2 - Test Circuit, Saturated Operation
Rev. 3.0, 10-Mar-16
Document Number: 83510
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT110. Series
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
CTI
t = 1 min
V
ISO
V
IOTM
V
IORM
V
IORM
x 1.6 = V
PR
, type and sample test,
t
m
= 60 s, partial discharge < 5 pC
V
IORM
x 1.875 = V
PR
, 100 % production test
with t
m
= 1 s, partial discharge < 5 pC
V
IO
= 500 V
DC
, T
amb
= 100 °C
V
IO
= 500 V
DC
, T
amb
= T
SI
V
PR
V
PR
R
IO
R
IO
P
SO
I
SI
T
SI
VALUE
40/110/21
175
3750
6000
707
1132
1326
10
11
10
9
350
150
175
V
RMS
V
V
V
peak
V
peak
Ω
Ω
mW
mA
°C
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification (according to IEC 68 part 1)
Comparative tracking index
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Apparent charge test voltage (method A)
Apparent Charge Test Voltage (method B)
Isolation resistance
Isolation resistance (under fault conditions)
Output safety power
Input safety current
Input safety temperature
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
SAFETY AND INSULATION RATINGS
PARAMETER
Creepage distance
Clearance distance
Insulation thickness, reinforced rated
per IEC60950 2.10.5.1
TEST CONDITION
SYMBOL
MIN.
5
5
0.4
TYP.
MAX.
UNIT
mm
mm
mm
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Total Power Dissipation (mW)
300
Coupled device
250
200
Phototransistor
150
100
50
0
0
96 11700
100
I
F
- Forward Current (mA)
10
T
amb
= 110 °C
T
amb
= 75 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= -55 °C
IR-diode
1
40
80
120
0.1
0.6
0.8
1.0
1.2
1.4
1.6
T
amb
- Ambient Temperature (°C)
V
F
- Forward Voltage (V)
Fig. 5 - Forward Voltage vs. Forward Current
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Rev. 3.0, 10-Mar-16
Document Number: 83510
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCMT110. Series
www.vishay.com
Vishay Semiconductors
N
CTR
- Normalized CTR (non-saturated)
55
I
C
- Collector Current (mA)
50
45
40
35
30
25
20
15
10
5
0
0
1
2
3
4
I
F
= 1 mA
I
F
= 35 mA
1.2
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
I
F
= 30 mA
I
F
= 25 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
-60 -40 -20
0
20
40
60
80 100 120
5
6
7
8
9
10
V
CE
- Collector Emitter Voltage (non-sat) (V)
Fig. 6 - Collector Current vs. Collector Emitter Voltage
T
amb
- Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
10 000
1000
1.2
N
CTR
- Normalized CTR (sat)
I
F
= 0 mA
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
I
CE0
- Leakage Current (nA)
V
CE
= 40 V
100
10
1
0.1
V
CE
= 24 V
V
CE
= 12 V
0.01
0.001
-60 -40 -20
0
20
40
60
80 100 120
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
-60 -40 -20
0
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
Fig. 7 - Leakage Current vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
V
CEsat
- Collector Emitter Voltage (V)
14
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-60 -40 -20
0
20
40
60
80 100 120
I
c
= 1 mA
I
c
= 2 mA
I
F
= 10 mA
I
C
- Collector Current (mA)
12
10
8
6
4
2
0
0
0.1
I
F
= 1 mA
I
F
= 10 mA
I
c
= 5 mA
I
F
= 5 mA
I
F
= 2 mA
0.2
0.3
0.4
V
CE
- Collector Emitter Voltage (V)
Fig. 8 - Collector Current vs. Collector Emitter Voltage
T
amb
- Ambient Temperature (°C)
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
Rev. 3.0, 10-Mar-16
Document Number: 83510
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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