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IRFL210TRPBF

Description
N channel, 200V, 0.96A, 1.5Ω@10V
CategoryDiscrete semiconductor    The transistor   
File Size169KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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IRFL210TRPBF Overview

N channel, 200V, 0.96A, 1.5Ω@10V

IRFL210TRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-261AA
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time6 weeks
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)50 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)0.96 A
Maximum drain current (ID)0.96 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.1 W
Maximum pulsed drain current (IDM)7.7 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFL210, SiHFL210
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.2
1.8
4.5
Single
D
FEATURES
200
1.5
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Available
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
SOT-223
D
S
S
G
D
G
Marking code: FC
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHFL210-GE3
IRFL210PbF
SiHFL210-E3
SOT-223
SiHFL210TR-GE3
a
IRFL210TRPbF
a
SiHFL210T-E3
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
200
± 20
0.96
0.6
7.7
0.025
0.017
50
0.96
0.31
3.1
2.0
5.0
-55 to +150
300
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Linear Derating Factor (PCB
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
for 10 s
Soldering Recommendations (Peak Temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 81 mH, R
G
= 25
,
I
AS
= 0.96 A (see fig. 12).
c. I
SD
3.3 A, dI/dt
70 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S14-1685-Rev. E, 18-Aug-14
Document Number: 91193
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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