TEMD5080X01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4.24 x 1.12
• Radiant sensitive area (in mm
2
): 7.7
• AEC-Q101 qualified
• Enhanced blue photo sensitivity: S (400 nm)
rel > 30 %
• Peak sensitivity at 940 nm
• Suitable for visible and near infrared radiation
20535
• Low junction capacitance
• Fast response times
• Angle of half sensitivity:
= ± 65°
DESCRIPTION
TEMD5080X01 is a PIN photodiode with enhanced blue
sensitivity. The miniature surface mount package (SMD)
include a chip with 7.7 mm
2
sensitive area, covered by clear
epoxy.
• Floor life: 72 h, MSL 4, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
TEMD5080X01
I
ra
(μA)
60
(deg)
± 65
0.1
(nm)
350 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TEMD5080X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 1500 pcs, 1500 pcs/reel
PACKAGE FORM
Top view
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Acc. reflow solder profile fig. 8
T
amb
25
°C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
25
215
100
- 40 to + 100
- 40 to + 110
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.3, 23-Aug-11
Document Number: 81643
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TEMD5080X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
k
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1
E
e
= 1
E
e
= 1
mW/cm
2
,
mW/cm
2
,
mW/cm
2
,
= 950 nm
= 950 nm
= 950 nm
E
e
= 1 mW/cm
2
,
= 950 nm
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
I
ra
I
ra
TK
Ira
TK
Ira
p
0.1
V
R
= 10 V,
= 400 nm
V
R
= 5 V, R
L
= 50
,
= 850 nm
V
R
= 5 V, R
L
= 50
,
= 850 nm
NEP
t
r
t
f
25
2
90
30
350
- 2.6
50
0.1
18
8.5
60
0.15
0.1
± 65
940
350 to 1100
1.1 x 10
-13
40
40
40
10
MIN.
TYP.
1
MAX.
1.3
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
μA
μA
%/K
%/K
deg
nm
nm
W/Hz
ns
ns
E
e
= 1 mW/cm
2
,
= 400 nm,
V
R
= 5 V
Reverse light current
E
V
= 100 lx, CIE illuminant A,
V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm,
V
R
= 5 V
Temperature coefficient of I
ra
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
CIE illuminant A
= 950 nm
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
I
ra rel
- Relative Reverse Light Current
1000
I
ro
- Reverse Dark Current (nA)
1.4
1.2
100
V
R
= 5 V
λ
= 950 nm
1.0
10
0.8
V
R
= 10 V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
94
8403
T
amb
- Ambient Temperature (°C)
94
8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.3, 23-Aug-11
Document Number: 81643
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TEMD5080X01
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
100
S
rel
- Relative Radiant Sensitivity
10
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
1
V
R
= 5 V
CIE illuminant A
0.1
20538
1
10
100
1000
94
8406
E
v
- Illuminance (lx)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
100
90
C
D
- Diode Capacitance (pF)
80
70
60
50
40
30
20
10
0
0.1
20539
E=0
f = 1 MHz
1
10
100
V
R
- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
S (
λ
)
rel
- Relative Spectral Responsivity
1.0
0.8
0.6
0.4
0.2
0
400
500
600 700
800
900 1000 1100
λ
-
Wavelength
(nm)
20540
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Rev. 1.3, 23-Aug-11
Document Number: 81643
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
I
ra
- Photo Current (µA)
TEMD5080X01
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
Drawing-No.: 6.541-5060.01-4
Issue: 3; 05.02.08
20536
Not
indicated tolerances ± 0.1
Rev. 1.3, 23-Aug-11
Document Number: 81643
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TEMD5080X01
www.vishay.com
TAPING DIMENSIONS
in millimeters
Vishay Semiconductors
20537
REEL DIMENSIONS
in millimeters
20874
Rev. 1.3, 23-Aug-11
Document Number: 81643
5
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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