SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes
FEATURES
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• The SD103 series is a metal-on-silicon Schottky barrier
device which is protected by a PN junction guardring
• For general purpose applications
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 10.3 mg
Cathode band color:
black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
SD103AW
SD103BW
SD103CW
ORDERING CODE
SD103AW-E3-08 or SD103AW-E3-18
SD103AW-HE3-08 or SD103AW-HE3-18
SD103BW-E3-08 or SD103BW-E3-18
SD103BW-HE3-08 or SD103BW-HE3-18
SD103CW-E3-08 or SD103CW-E3-18
SD103CW-HE3-08 or SD103CW-HE3-18
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
TYPE MARKING
S6
S7
S8
Tape and reel
REMARKS
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Power dissipation (infinite heat sink)
Single cycle surge
(1)
TEST CONDITION
PART
SD103AW
SD103BW
SD103CW
SYMBOL
V
RRM
V
RRM
V
RRM
I
F
P
tot
VALUE
40
30
20
350
400
2
UNIT
V
V
V
mA
mW
A
10 μs square wave
I
FSM
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Operating temperature range
Storage temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
TEST CONDITION
SYMBOL
R
thJA
T
j
T
op
T
stg
VALUE
300
125
- 55 to + 125
- 55 to + 150
UNIT
K/W
°C
°C
°C
Rev. 1.6, 11-Mar-13
Document Number: 85681
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
TEST CONDITION
V
R
= 30 V
V
R
= 20 V
V
R
= 10 V
I
F
= 20 mA
I
F
= 200 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 50 mA to 200 mA,
recover to 0.1 I
R
PART
SD103AW
SD103BW
SD103CW
SYMBOL
I
R
I
R
I
R
V
F
V
F
C
D
t
rr
50
10
MIN.
TYP.
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
T
amb
= 125 °C
1000
I
R
- Reverse Current (µA)
I
F
- Forward Current (mA)
100
10
1
0.1
0.01
100
10
100 °C
75 °C
50 °C
1
0.1
0.01
0
20084
25 °C
0
0.2
0.4
0.6
0.8
1.0
5
10 15 20 25 30 35 40 45 50
V
R
- Reverse
Voltage
(V)
18488
V
F
- Forward
Voltage
(V)
Fig. 1 -
Typical Variation of Forward Current vs. Forward Voltage
Fig. 3 -
Typical Variation of Reverse Current at Various
Temperatures
5
4
3
2
1
0
0
18489
100
C
D
- Diode Capacitance (pF)
t
p
= 300 ms
duty cycle = 2 %
I
F
- Forward Current (A)
10
1
0.5
1.0
1.5
18491
0
10
20
30
40
50
V
F
- Forward
Voltage
(V)
V
R
- Reverse
Voltag
e (V)
Fig. 2 -
Typical High Current Forward Conduction Curve
Fig. 4 -
Typical Capacitance vs. Reverse Voltage
Rev. 1.6, 11-Mar-13
Document Number: 85681
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SD103AW, SD103BW, SD103CW
www.vishay.com
Vishay Semiconductors
50
V
R
- Reverse
Voltage
(V)
40
100 mA
30
I
F
= 400 mA
20
10
0
18492
200 mA
0
100
T
amb
- Ambient Temperature (°C)
200
Fig. 5 -
Blocking Voltage Deration vs. Temperature at Various
Average Forward Currents
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-123
0.1 (0.004) max.
1.35 (0.053)
8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
2.85 (0.112)
2.55 (0.100)
0.15 (0.006)
0.10 (0.004)
1 (0.039)
0.2 (0.008)
0° to
Mounting Pad Layout
0.85 (0.033)
0.85 (0.033)
0.65 (0.026)
0.45 (0.018)
3.85 (0.152)
3.55 (0.140)
1.40 (0.055)
1.7 (0.067)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.6, 11-Mar-13
Document Number: 85681
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.85 (0.033)
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000