a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on T
A
= 25 °C.
f. Surface mounted on 1" x 1" FR4 board with full copper.
g. Maximum under steady state conditions is 100 °C/W.
h. Surface mounted on 1" x 1" FR4 board with minimum copper.
i. Maximum under steady state conditions is 190 °C/W.
S15-1510-Rev. C, 29-Jun-15
Document Number: 65001
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1
m
m
m
1m
Backside View
4
D
Bump
Side
View
P-Channel MOSFET
D
SYMBOL
t = 10 s
t = 10 s
R
thJA
TYPICAL
55
125
MAXIMUM
70
160
UNIT
°C/W
Si8461DB
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= -20 V, V
GS
= 0 V
V
DS
= -20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
-5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -1.5 A
V
GS
= -2.5 V, I
D
= -1.5 A
V
GS
= -1.8 V, I
D
= -1 A
V
GS
= -1.5 V, I
D
= -0.5 A
V
DS
= -10 V, I
D
= -1 A
MIN.
-20
-
-
-0.4
-
-
-
-10
-
-
-
-
-
-
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -10 V, V
GS
= -8 V, I
D
= 1 A
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= 1 A
V
GS
= -0.1 V, f = 1 MHz
V
DD
= -10 V, R
L
= 10
Ω
I
D
≅
-1 A, V
GEN
= -4.5 V, R
g
= 1
Ω
-
-
-
-
-
-
-
-
-
-
-
-
V
DD
= -10 V, R
L
= 10
Ω
I
D
≅
-1 A, V
GEN
= -8 V, R
g
= 1
Ω
-
-
-
TYP.
-
-12
2.5
-
-
-
-
-
0.083
0.098
0.115
0.136
7
610
120
95
16
9.5
0.9
2.6
6.5
15
25
35
10
7
12
32
12
MAX.
-
-
-
-1
± 100
-1
-10
-
0.100
0.118
0.140
0.205
-
-
-
-
24
15
-
-
-
25
40
55
15
15
20
50
20
ns
Ω
nC
pF
S
Ω
UNIT
V
mV/°C
V
nA
μA
A
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
R
DS(on)
Forward Transconductance
Dynamic
b
a
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
A
= 25 °C
-
-
-
-
-0.8
15
10
9
6
-1.5
-20
-1.2
30
20
-
-
A
V
ns
nC
ns
I
S
= -1 A, V
GS
= 0 V
-
-
-
-
-
I
F
= -1 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1510-Rev. C, 29-Jun-15
Document Number: 65001
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8461DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 2.5 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
Vishay Siliconix
12
V
GS
= 2 V
3
T
C
= 25 °C
8
V
GS
= 1.5 V
4
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
2
T
C
= 125 °C
1
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.25
V
GS
= 1.5 V
R
DS(on)
- On-Resistance (Ω)
0.20
C - Capacitance (pF)
V
GS
= 1.8 V
1500
1200
0.15
V
GS
= 2.5 V
0.10
V
GS
= 4.5 V
0.05
900
C
iss
600
300
C
rss
0
C
oss
0.00
0
5
10
15
I
D
- Drain Current (A)
20
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
1.3
I
D
= 1 A
6
V
DS
= 10 V
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1 A
1.2
Capacitance
8
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 1.8 V, 1.5 V
1.1
V
GS
= 4.5 V, 2.5 V
1.0
4
V
DS
= 16 V
2
0.9
0
0
4
8
12
16
Q
g
- Total Gate Charge (nC)
0.8
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-1510-Rev. C, 29-Jun-15
On-Resistance vs. Junction Temperature
Document Number: 65001
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8461DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.20
I
D
= 1 A
R
DS(on)
- On-Resistance (Ω)
0.16
I
S
- Source Current (A)
Vishay Siliconix
10
T
J
= 150 °C
0.12
T
J
= 125 °C
T
J
= 25 °C
1
0.08
T
J
= 25 °C
0.04
0.1
0.0
0.00
0.3
0.6
0.9
1.2
V
SD
- Source-to-Drain Voltage (V)
1.5
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
25
0.8
I
D
= 250 µA
0.7
Power (W)
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
V
GS(th)
(V)
20
15
0.6
10
0.5
5
0.4
0.3
- 50
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
100 µs
1
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1 ms
10 ms
100 ms, 1 s
10 s, DC
Safe Operating Area, Junction-to-Ambient
S15-1510-Rev. C, 29-Jun-15
Document Number: 65001
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8461DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4
1.5
Vishay Siliconix
1.2
I
D
- Drain Current (A)
3
Power Dissipation (W)
0
25
50
75
100
125
150
0.9
2
0.6
1
0.3
0
T
A
- Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating
a
Note
• When mounted on 1" x 1" FR4 with full copper.
Power Derating
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-1510-Rev. C, 29-Jun-15
Document Number: 65001
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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