Si7904BDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
1
N-Channel
MOSFET
S
2
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
Limit
20
±8
6
a
6
a
6
a
5.1
b, c
20
6
a
2.1
b, c
17.8
9.3
2.5
b, c
1.3
b, c
- 55 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
A
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 85 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
I
DM
I
S
P
D
W
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t
≤
10 s
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 94 °C/W.
Document Number: 74409
S-83050-Rev. B, 29-Dec-08
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
40
5.6
Maximum
50
7
Unit
Si7904BDN
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
c
iss
c
oss
c
rss
V
DS
= 10 V, V
GS
= 8 V, I
D
= 6 A
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5.1 A, V
GS
=
0 V
0.8
20
9
12
8
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
5.1 A, V
GEN
= 8 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
5.1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 7.1 A
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
T
C
= 25 °C
6
20
1.2
40
20
A
V
ns
nC
ns
860
110
65
16
9
1.4
1.4
3.2
7
60
25
6
5
15
25
5
15
90
40
10
10
25
40
10
ns
Ω
24
13.5
nC
pF
V
GS
=
2.5 V, I
D
= 6.5 A
V
GS
=
1.8 V, I
D
= 2.2 A
V
DS
= 10 V, I
D
= 7.1 A
20
0.025
0.030
0.036
26
0.030
0.036
0.045
S
Ω
0.45
20
22.5
- 2.9
1.0
± 100
1
10
µA
Α
V
mV/°C
V
ns
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 74409
S-83050-Rev. B, 29-Dec-08
Si7904BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
20
V
GS
= 5 thru 2
V
8
15
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
6
25 °C, unless otherwise noted
10
10
1.5
V
5
4
T
C
= 125 °C
2
25 °C
0
0.0
- 55 °C
1
V
0
0.0
0.4
0.8
1.2
1.6
2.0
0.3
0.6
0.9
1.2
1.5
1.8
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.060
1200
Transfer Characteristics
V
GS
= 1.8
V
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.050
900
C
iss
0.040
V
GS
= 2.5
V
0.030
600
300
C
oss
V
GS
= 4.5
V
0.020
0
5
10
I
D
- Drain Current (A)
15
20
0
0
C
rss
4
8
12
16
20
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
8
7
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
6
5
4
3
2
1
0
0
3
6
9
12
15
18
V
DS
= 16
V
I
D
= 6 A
V
DS
= 10
V
I
D
= 6 A
R
DS(on)
- On-Resistance
1.8
Capacitance
1.6
I
D
= 7.1 A
1.4
(
N
ormalized)
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74409
S-83050-Rev. B, 29-Dec-08
www.vishay.com
3
Si7904BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.060
I
D
= 7.1 A
25 °C
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.050
I
D
= 7.1 A
125 °C
T
J
= 150 °C
10
0.040
T
J
= 25 °C
0.030
1
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0.020
0
1
2
3
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.8
I
D
= 250
µA
On-Resistance vs. Gate-to-Source Voltage
50
0.7
V
G S(th)
V
ariance (
V
)
40
0.6
0.5
Po
w
er (W)
30
20
0.4
0.3
10
0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power (Junction-to-Ambient)
100
µs
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74409
S-83050-Rev. B, 29-Dec-08
Si7904BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
25
20
I
D
- Drain C
u
rrent (A)
Po
w
er Dissipation (
W
)
20
15
15
10
10
5
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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