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VS-ETH3006-M3

Description
DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 30A Forward voltage drop (Vf): 2.65V @ 30A Reverse recovery time (trr): 27ns
CategoryDiscrete semiconductor    diode   
File Size177KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VS-ETH3006-M3 Overview

DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 30A Forward voltage drop (Vf): 2.65V @ 30A Reverse recovery time (trr): 27ns

VS-ETH3006-M3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationHYPERFAST SOFT RECOVERY HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current180 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
VS-ETH3006-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
2
Base
cathode
2
• Hyperfast soft recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
3
1
Cathode
3
Anode
• True 2 pin package
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2L TO-220AC
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
30 A
600 V
1.4 V
27 ns
175 °C
2L TO-220AC
Single
DESCRIPTION / APPLICATIONS
Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop, hyperfast recovery
time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current in DC
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 131 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
30
180
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.4
0.02
50
20
8
MAX.
-
2.65
1.8
30
300
-
-
μA
pF
nH
V
UNITS
Revision: 22-Jul-2019
Document Number: 96631
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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