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IRFP460BPBF

Description
Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 250mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 278W(Tc) Type: N channel N channel
CategoryDiscrete semiconductor    The transistor   
File Size189KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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IRFP460BPBF Overview

Drain-source voltage (Vdss): 500V Continuous drain current (Id) (at 25°C): 20A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 250mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 278W(Tc) Type: N channel N channel

IRFP460BPBF Parametric

Parameter NameAttribute value
MakerVishay
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Samacsys DescriptionVishay IRFP460BPBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC
Avalanche Energy Efficiency Rating (Eas)281 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)62 A
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. at 25 °C ()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
170
14
28
Single
D
FEATURES
• Optimal Design
550
0.25
- Low Area Specific On-Resistance
- Low Input Capacitance (C
iss
)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R
on
x Q
g
- Fast Switching
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
TO-247AC
G
S
D
G
S
N-Channel MOSFET
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
• SMPS
- Power Factor Correction (PFC)
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-247AC
IRFP460BPbF
SiHG460B-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (T
J
= 150 °C)
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J
, T
stg
dV/dt
LIMIT
500
± 20
30
20
13
62
2.2
281
278
- 55 to + 150
24
0.36
300
c
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
T
J
= 125 °C
d
Reverse Diode dV/dt
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 10 mH, R
g
= 25
,
I
AS
= 7.5 A.
c. 1.6 mm from case.
d. I
SD
I
D
, starting T
J
= 25 °C.
S12-0812-Rev. B, 16-Apr-12
Document Number: 91502
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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