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BAS16-E3-08

Description
Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA
CategoryDiscrete semiconductor    diode   
File Size86KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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BAS16-E3-08 Overview

Reverse recovery time (trr): 6ns DC reverse withstand voltage (Vr): 75V Average rectified current (Io): 150mA Forward voltage drop (Vf): 1.25V @ 150mA

BAS16-E3-08 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.35 W
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.006 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
BAS16
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
3
• Ultra fast switching speed
• Surface mount package ideally suited for
automatic insertion
• High conductance
1
2
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAS16
ORDERING CODE
BAS16-E3-08 or BAS16-E3-18
BAS16-HE3-08 or BAS16-HE3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
A6
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
Peak forward surge current
t
p
= 1 s
t
p
= 1 μs
Half wave rectification with resistive load and
f
50 MHz, on ceramic substrate
8 mm x 10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
TEST CONDITION
SYMBOL
V
RM
V
RRM
= V
RWM
= V
R
I
FSM
I
FSM
I
F(AV)
I
F
P
tot
VALUE
100
75
1
2
150
300
350
UNIT
V
V
A
A
mA
mA
mW
Average forward current
Forward current
Power dissipation
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
Junction and storage temperature range
Operating temperature range
TEST CONDITION
On ceramic substrate
8 mm x 10 mm x 0.7 mm
SYMBOL
R
thJA
T
j
= T
stg
T
op
VALUE
357
-55 to +150
-55 to +150
UNIT
K/W
°C
°C
Rev. 1.8, 22-Nov-13
Document Number: 85539
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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