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SIHB33N60E-GE3

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 33A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 99mΩ @ 16.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 278W (Tc) Type: N-channel N-channel, 650V, 33A, 0.099Ω@10V
CategoryDiscrete semiconductor    The transistor   
File Size225KB,9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SIHB33N60E-GE3 Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 33A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 99mΩ @ 16.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 278W (Tc) Type: N-channel N-channel, 650V, 33A, 0.099Ω@10V

SIHB33N60E-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time12 weeks
Avalanche Energy Efficiency Rating (Eas)793 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)33 A
Maximum drain current (ID)33 A
Maximum drain-source on-resistance0.099 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)278 W
Maximum pulsed drain current (IDM)88 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SiHB33N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. () at 25 °C
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
150
24
42
Single
D
FEATURES
650
0.099
Low figure-of-merit (FOM): R
on
x Q
g
Low input capacitance (C
iss
)
Reduced switching and conduction losses
Ultra low gate charge (Q
g
)
Available
Avalanche energy rated (UIS)
Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
D
2
PAK (TO-263)
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
G
G D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
D
2
PAK (TO-263)
SiHB33N60E-E3
SiHB33N60E-GE3
SiHB33N60ET5-GE3
SiHB33N60ET1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
d
Soldering Recommendations (Peak temperature)
c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 7.5 A.
c. 1.6 mm from case.
d. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
V
DS
= 0 V to 80 % V
DS
E
AS
P
D
T
J
, T
stg
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
33
21
88
2.2
793
278
-55 to +150
70
12
300
W/°C
mJ
W
°C
V/ns
°C
A
UNIT
V
S16-0799-Rev. H, 02-May-16
Document Number: 91524
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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