VOM617A
www.vishay.com
Vishay Semiconductors
Low Input Current, Phototransistor Output, SOP-4,
Mini-Flat Package
FEATURES
A
C
1
2
4
3
C
E
• Operating temperature from - 55 °C to + 110 °C
• SOP-4 mini-flat package
• Isolation test voltage, 3750 V
RMS
• Low saturation voltage
• Fast switching times
i179089
• Low coupling capacitance
DESCRIPTION
The 110 °C rated VOM617A has a GaAs infrared emitting
diode emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4 pin
100 mil lead pitch miniflat package. It features a high current
transfer ratio, low coupling capacitance, and high isolation
voltage.
These coupling devices are designed for signal transmission
between two electrically separated circuits.
• End-stackable, 0.100" (2.54 mm) spacing
• CTR range 40 % to 600 %, I
F
= 5 mA
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• PLCs
• Telecommunication
• Lighting control system
• Solar inverters
• AC drives
AGENCY APPROVALS
(All parts are certified under base model VOM617A)
• UL1577, file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5), available with option 1
• FIMKO EN 60065 and EN 60950-1
• CQC GB8898-2011, GB4943.1-2001
ORDERING INFORMATION
V
O
M
6
1
7
A
-
#
CTR
BIN
X
0
0
1
T
TAPE
AND
REEL
SOP-4
PART NUMBER
VDE OPTION
≥
5
AGENCY
CERTIFIED/
PACKAGE
UL, cUL,
FIMKO, CQC
SOP-4,
mini-flat
VDE, UL, cUL,
FIMKO, CQC
SOP-4,
mini-flat
50 to 600
63 to 125
100 to 200
CTR (%)
5 mA
160 to 320
250 to 500
80 to 160
130 to 260
200 to 400
VOM617AT VOM617A-2T VOM617A-3T VOM617A-4T VOM617A-6T VOM617A-7T VOM617A-8T VOM617A-9T
50 to 600
VOM617A-
X001T
63 to 125
VOM617A-
2X001T
100 to 200
VOM617A-
3X001T
160 to 320
VOM617A-
4X001T
250 to 500
VOM617A-
6X001T
80 to 160
VOM617A-
7X001T
130 to 260
VOM617A-
8X001T
200 to 400
VOM617A-
9X001T
Rev. 1.3, 11-Dec-12
Document Number: 83446
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOM617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
UNIT
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
DC forward current
Reverse voltage
Power dissipation
Surge forward current
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Total power dissipation
Operating temperature range
Storage temperature range
Junction temperature
Soldering temperature
(1)
t = 1 min
V
ISO
P
tot
T
amb
T
stg
T
j
T
sld
3750
170
- 55 to + 110
- 55 to + 150
125
260
V
RMS
mW
°C
°C
°C
°C
t
p
≤
1 ms
V
CEO
V
ECO
I
C
P
diss
80
7
50
100
150
V
V
mA
mA
mW
t
p
≤
10 μs
I
F
V
R
P
diss
I
FSM
60
6
70
2.5
mA
V
mW
A
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
See “Assembly Instructions” for surface mounted devices (www.vishay.com/doc?80054).
P
tot
- Total Power Dissipation (mW)
200
Coupled device
150
100
Phototransistor
50
IR-diode
0
0
25
50
75
100
125
T
amb
- Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Rev. 1.3, 11-Dec-12
Document Number: 83446
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOM617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 5 mA
V
R
= 6 V
V
R
= 0 V, f = 1 MHz
V
CE
= 20 V
I
C
= 100 μA
I
E
= 10 μA
V
CE
= 5 V, f = 1 MHz
f = 1 MHz
I
F
= 10 mA, I
C
= 2.5 mA
I
F
= 10 mA, V
CC
= 5 V, R
L
= 100
Ω
SYMBOL
V
F
I
R
C
j
I
CEO
BV
CEO
BV
ECO
C
CE
C
IO
V
CEsat
f
ctr
80
7
2.8
0.3
0.12
110
0.4
MIN.
TYP.
1.1
0.01
9
0.3
100
MAX.
1.6
10
UNIT
V
μA
pF
nA
V
V
pF
pF
V
kHz
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter leakage current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector emitter capacitance
COUPLER
Coupling capacitance
Collector emitter saturation voltage
Cut-off frequency
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
VOM617A
VOM617A-2
VOM617A-3
I
C
/I
F
I
F
= 5 mA, V
CE
= 5 V
VOM617A-4
VOM617A-6
VOM617A-7
VOM617A-8
VOM617A-9
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
63
100
160
250
80
130
200
TYP.
MAX.
600
125
200
320
500
160
260
400
UNIT
%
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
NON-SATURATED
Rise and fall time
Fall time
Turn-on time
Turn-off time
SATURATED
Rise and fall time
Fall time
Turn-on time
Turn-off time
I
F
= 1.6 mA, V
CC
= 5 V,
R
L
= 1.9 kΩ
t
r
t
f
t
on
t
off
7
12
9
15
μs
μs
μs
μs
I
C
= 2 mA, V
CC
= 5 V,
R
L
= 100
Ω
t
r
t
f
t
on
t
off
3
3
6
4
μs
μs
μs
μs
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rev. 1.3, 11-Dec-12
Document Number: 83446
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOM617A
www.vishay.com
Vishay Semiconductors
Input pulse
V
CC
= 5 V
Input
R
L
V
OUT
10 %
Output pulse
90 %
t
r
t
on
t
f
t
off
Fig. 2 - Test Circuit
Fig. 3 - Test Circuit and Waveforms
SAFETY AND INSULATION RATINGS
PARAMETER
MAXIMUM SAFETY RATINGS
Output safety power
Input safety current
Safety temperature
Comparative tracking index
INSULATION RATED PARAMETERS
Maximum withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Insulation resistance
Isolation resistance
T
amb
= 25 °C, V
DC
= 500 V
T
amb
= 100 °C, V
DC
= 500 V
V
ISO
V
IOTM
V
IORM
R
IO
R
IO
3750
6000
565
10
12
10
11
55/110/21
2
≥
5
≥
5
≥
5
≥
0.4
mm
mm
mm
mm
V
RMS
V
peak
V
peak
Ω
Ω
P
SO
I
si
T
S
CTI
300
200
150
175
mW
mW
°C
SYMBOL
VALUE
UNIT
Climatic classification (according to IEC 68 part 1)
Environment (pollution degree in accordance to DIN VDE 0109)
Internal creepage
External creepage
Clearance
Insulation thickness
Note
• As per DIN EN 60747-5-5 (VDE 0884), § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Rev. 1.3, 11-Dec-12
Document Number: 83446
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOM617A
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
14
Vishay Semiconductors
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
10
T
amb
= 110 °C
T
amb
= 75 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 55 °C
12
10
8
6
4
2
0
I
F
= 1 mA
I
F
= 10 mA
I
F
= 5 mA
1
I
F
= 2 mA
0.1
0.6
0.8
1.0
1.2
1.4
1.6
0
0.1
0.2
0.3
0.4
V
F
- Forward Voltage (V)
Fig. 4 - Forward Voltage vs. Forward Current
V
CE
- Collector Emitter Voltage (sat) (V)
Fig. 7 - Collector Current vs. Collector Emitter Voltage (sat)
55
N
CTR
- Normalized CTR (non-saturated)
I
C
- Collector Current (mA)
50
45
40
35
30
25
20
15
10
5
0
0
1
2
3
4
I
F
= 1 mA
I
F
= 35 mA
1.2
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
I
F
= 30 mA
I
F
= 25 mA
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 5 mA
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
- 60 - 40 - 20 0
20
40
60
80 100 120
5
6
7
8
9
10
V
CE
- Collector Emitter Voltage (non-sat) (V)
Fig. 5 - Collector Current vs. Collector Emitter Voltage (NS)
T
amb
- Ambient Temperature (°C)
Fig. 8 - Normalized Current Transfer Ratio (non-sat) vs.
Ambient Temperature
10 000
1.2
I
CE0
- Leakage Current (nA)
N
CTR
- Normalized CTR (sat)
I
F
= 0 mA
1000
I
F
= 5 mA
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 40 V
100
10
1
0.1
V
CE
= 24 V
V
CE
= 12 V
0.01
0.001
- 60 - 40 - 20 0
20
40
60
80 100 120
Normalized to CTR value:
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
- 60 - 40 - 20 0
20
40
60
80 100 120
T
amb
- Ambient Temperature (°C)
Fig. 6 - Leakage Current vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 9 - Normalized Current Transfer Ratio (sat) vs.
Ambient Temperature
Rev. 1.3, 11-Dec-12
Document Number: 83446
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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