VOMA617A
www.vishay.com
Vishay Semiconductors
Optocoupler, Phototransistor Output, Low Input Current,
SOP-4, Mini-Flat Package
FEATURES
• AEC-Q101 qualified
A
C
1
2
4
3
C
E
• High CTR with low input current
• SOP-4 low profile package
• High collector emitter voltage, V
CEO
= 80 V
• Isolation test voltage = 3750 V
RMS
• Low coupling capacitance
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
The VOMA617A series has a GaAlAs infrared emitting diode,
which is optically coupled to a silicon planar phototransistor
detector, and is incorporated in a 4-pin mini-flat package.
It features a high current transfer ratio at low input current,
low coupling capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits, specifically for
use in automotive, as well as high reliable industrial
applications.
APPLICATIONS
• Galvanic and noise isolation
• Signal transmission
• Hybrid / electric vehicle applications
• Battery management
• 48 V board net
• System control
AGENCY APPROVALS
• UL1577
• cUL 1577
• DIN EN 60747-5-5 (VDE 0884-5)
• CQC GB4943.1-2011 (pending)
ORDERING INFORMATION
V
O
M
A
6
1
7
A
-
#
CTR
BIN
X
0
0
1
T
TAPE
AND
REEL
SOP-4
PART NUMBER
PACKAGE OPTION
≥
5 mm
AGENCY CERTIFIED / PACKAGE
UL, cUL, VDE, CQC
SOP-4
50 to 600
VOMA617A-X001T
CTR (%)
5 mA
100 to 200
VOMA617A-3X001T
Note
• Additional options may be possible, please contact sales office
Rev. 1.0, 20-Feb-18
Document Number: 84433
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOMA617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
P
diss
I
F
t
p
≤
10 μs
I
FSM
T
j
V
CEO
V
ECO
I
C
P
diss
T
j
P
tot
T
stg
T
amb
t = 10 s
T
sld
VALUE
5
30
20
0.5
125
80
7
50
150
125
180
-40 to +150
-40 to +110
260
UNIT
V
mW
mA
A
°C
V
V
mA
mW
°C
mW
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Power dissipation
Forward current
Surge forward current
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
COUPLER
Total power dissipation
Storage temperature range
Ambient temperature range
Soldering temperature
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
Axis Title
200
2nd line
P
tot
- Total Power Dissipation (mW)
Coupled device
Axis Title
10000
2nd line
I
F
- Forward Current (mA)
25
10000
20
1000
1st line
2nd line
100
5
10
0
25
50
75
100
125
T
amb
- Ambient Temperature (°C)
15
150
1000
100
100
50
IR diode
1st line
2nd line
Phototransistor
10
0
0
25
50
75
100
125
T
amb
- Ambient Temperature (°C)
10
0
Fig. 1 - Power Dissipation vs. Ambient Temperature
Fig. 2 - Maximum Forward Current vs. Ambient Temperature
Rev. 1.0, 20-Feb-18
Document Number: 84433
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOMA617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 5 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz
V
CE
= 50 V
I
C
= 100 μA
V
CE
= 5 V, f = 1 MHz
I
F
= 5 mA, I
C
= 1.25 mA
I
F
= 10 mA, V
CC
= 5 V, R
L
= 100
Ω
f = 1 MHz
SYMBOL
V
F
I
R
C
I
I
CEO
BV
CEO
C
CE
V
CEsat
f
CTR
C
IO
MIN.
-
-
-
-
80
-
-
-
-
TYP.
1.33
-
40
1
-
7
0.25
155
1.2
MAX.
1.5
10
-
100
-
-
0.4
-
-
UNIT
V
μA
pF
nA
V
pF
V
kHz
pF
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter leakage current
Collector emitter breakdown voltage
Collector emitter capacitance
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
C
/I
F
TEST CONDITION
I
F
= 5 mA, V
CE
= 5 V
PART
VOMA617A
VOMA617A-3
SYMBOL
CTR
CTR
MIN.
50
100
TYP.
-
-
MAX.
600
200
UNIT
%
%
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
NON-SATURATED
Rise time
Fall time
Turn-on time
Turn-off time
SATURATED
Rise time
Fall time
Turn-on time
Turn-off time
I
F
= 5 mA, V
CC
= 5 V,
R
L
= 1.9 kΩ
t
r
t
f
t
on
t
off
-
-
-
-
1.1
6.2
2.0
10.6
-
-
-
-
μs
μs
μs
μs
I
C
= 2 mA, V
CC
= 5 V,
R
L
= 100
Ω
t
r
t
f
t
on
t
off
-
-
-
-
2.3
3.2
4.9
3.3
-
-
-
-
μs
μs
μs
μs
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
CC
= 5 V
Input pulse
Input
R
L
V
OUT
5V
90 %
Output pulse
10 %
t
r
t
f
t
off
22986
23029
t
on
Fig. 3 - Test Circuit for Switching Characteristics
Fig. 4 - Parameter and Limit Definition
Rev. 1.0, 20-Feb-18
Document Number: 84433
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOMA617A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
According to IEC 68 part 1
According to DIN VDE 0109
Insulation group IIIa
According to UL1577, t = 1 min
According to DIN EN 60747-5-5
According to DIN EN 60747-5-5
T
amb
= 25 °C, V
IO
= 500 V
T
amb
= 100 °C, V
IO
= 500 V
T
amb
= T
S
, V
IO
= 500 V
SYMBOL
VALUE
40 / 110 / 21
2
175
3750
6000
707
≥
10
12
≥
10
11
≥
10
9
550
180
175
≥
5
≥
5
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
Pollution degree
Comparative tracking index
Maximum rated withstanding isolation voltage
Maximum transient isolation voltage
Maximum repetitive peak isolation voltage
Isolation resistance
Output safety power
Input safety current
Input safety temperature
Creepage distance
Clearance distance
CTI
V
ISO
V
IOTM
V
IORM
R
IO
R
IO
R
IO
P
SO
I
SI
T
S
V
RMS
V
peak
V
peak
Ω
Ω
Ω
mW
mA
°C
mm
mm
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits
Axis Title
200
2nd line
I
SI
- Input Savety Current (mA)
10000
2nd line
P
SO
- Output Savety Power (mW)
600
Axis Title
10000
150
1000
100
100
50
1st line
2nd line
400
1000
1st line
2nd line
200
100
0
-50
0
50
100
150
T
amb
- Ambient Temperature (°C)
10
0
-50
0
50
100
150
T
amb
- Ambient Temperature (°C)
10
Fig. 5 - Input Safety Current vs. Ambient Temperature
Fig. 6 - Output Safety Power vs. Ambient Temperature
Rev. 1.0, 20-Feb-18
Document Number: 84433
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VOMA617A
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Axis Title
10000
30
25
2nd line
I
C
- Collector Current (mA)
2nd line
I
F
- Forward Current (mA)
10
T
amb
= 100 °C
T
amb
= 75 °C
T
amb
= 50 °C
I
F
= 20 mA
Vishay Semiconductors
Axis Title
10000
1000
1st line
2nd line
20
15
10
5
0
0
0.1
0.2
0.3
0.4
V
CE
- Collector Emitter Voltage (V)
I
F
= 1 mA
I
F
= 0.5 mA
I
F
= 5 mA
I
F
= 2 mA
1000
1st line
2nd line
100
10
10000
I
F
= 5 mA, V
CE
= 5 V
I
F
= 10 mA
1
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= -40 °C
100
0.1
0.6
1.1
V
F
- Forward Voltage (V)
1.6
10
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 10 - Collector Current vs. Collector Emitter Voltage (sat.)
Axis Title
40
I
F
= 20 mA
Axis Title
10000
2nd line
N
CTR
- Normalized CTR (non-sat.)
1.2
1.0
0.8
0.6
0.4
0.2
0
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
100
1000
1st line
2nd line
Normalized to
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
2nd line
I
C
- Collector Current (mA)
30
1000
20
I
F
= 10 mA
100
10
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 5 mA
I
F
= 2 mA
1st line
2nd line
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
- Collector Emitter Voltage (V)
10
10
Fig. 8 - Collector Current vs. Collector Emitter Voltage (non-sat.)
Fig. 11 - Normalized CTR (non-sat.) vs. Ambient Temperature
Axis Title
10 000
I
F
= 0 mA
Axis Title
10000
2nd line
N
CTR
- Normalized CTR (sat.)
1.2
I
F
= 5 mA, V
CE
= 0.4 V
10000
1000
2nd line
I
CEO
- Leakage Current (nA)
V
CE
= 40 V
1.0
0.8
0.6
0.4
0.2
100
1000
1st line
2nd line
Normalized to
I
F
= 5 mA, V
CE
= 5 V, T
amb
= 25 °C
100
V
CE
= 30 V
1000
1st line
2nd line
100
V
CE
= 20 V
10
1
0.1
V
CE
= 10 V
0.01
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
10
0
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
10
Fig. 9 - Leakage Current vs. Ambient Temperature
Fig. 12 - Normalized CTR (sat.) vs. Ambient Temperature
Rev. 1.0, 20-Feb-18
Document Number: 84433
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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