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SI7846DP-T1-E3

Description
Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 50mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1.9W Type: N-channel
CategoryDiscrete semiconductor    The transistor   
File Size297KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI7846DP-T1-E3 Overview

Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 4A Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 50mΩ @ 5A, 10V Maximum power dissipation (Ta =25°C): 1.9W Type: N-channel

SI7846DP-T1-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-XDSO-C5
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFAST SWITCHING
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-C5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)5.2 W
Maximum pulsed drain current (IDM)50 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Si7846DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
R
DS(on)
(Ω)
0.050 at V
GS
= 10 V
I
D
(A)
6.7
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETS
• New Low Thermal Resistance PowerPAK
®
Package with Low 1.07 mm Profile
• PWM Optimized for Fast Switching
• 100 % R
g
Tested
PowerPAK SO-8
APPLICATIONS
5.15 mm
6.15 mm
S
1
2
3
S
S
• Primary Side Switch for High Density DC/DC
• Telecom/Server 48 V DC/DC
• Industrial and 42 V Automotive
D
G
4
D
8
7
6
5
D
D
D
G
Bottom View
S
Ordering Information:
Si7846DP-T1-E3 (Lead (Pb)-free)
Si7846DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
AS
I
S
P
D
T
J
, T
stg
10 s
6.7
5.4
4.3
5.2
3.3
Steady State
150
± 20
24.5
19.5
4.0
3.3
50
25
1.6
1.9
1.2
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case (Drain)
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
19
52
1.5
Maximum
24
65
1.8
Unit
°C/W
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
www.vishay.com
1

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