VS-30CTH03-M3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
2
3
3L
TO-220AB
Anode
1
2
Common
cathode
3
• Designed and qualified according to JEDEC
®
-JESD 47
Anode
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Circuit configuration
3L TO-220AB
2 x 15 A
300 V
0.85 V
See Recovery table
175 °C
Common cathode
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
per diode
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 153 °C
T
C
= 25 °C
TEST CONDITIONS
VALUES
300
15
30
150
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.0
0.85
-
8
38
8
MAX.
-
1.25
0.95
40
200
-
-
μA
pF
nH
V
UNITS
revision: 27-Nov-2018
Document Number: 96198
1
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-30CTH03-M3
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Vishay Semiconductors
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
33
48
2.8
6.5
46
160
MAX.
36
30
-
-
-
-
-
-
A
nC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
t
rr
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case per diode
Marking device
SYMBOL
T
J
, T
Stg
R
thJC
MIN.
-65
-
TYP.
-
-
MAX.
175
1.4
30CTH03
UNITS
°C
°C/W
Case style 3L TO-220AB
100
100
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (µA)
T
J
= 150 °C
10
T
J
= 125 °C
1
T
J
= 100 °C
T
J
= 75 °C
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.4
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
250
300
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
revision: 27-Nov-2018
Document Number: 96198
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CTH03-M3
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10
Vishay Semiconductors
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
.
10
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
100
I
F
= 15 A
Allowable Case Temperature (°C)
170
DC
160
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
140
0
5
10
15
20
25
10
100
T
J
= 125 °C
t
rr
(ns)
T
J
= 25 °C
150
V
R
= 200 V
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
1000
I
F
= 15 A
Average Power Loss (W)
16
RMS limit
T
J
= 125 °C
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(nC)
12
100
T
J
= 25 °C
8
4
DC
V
R
= 200 V
10
15
20
25
10
100
1000
0
0
5
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
revision: 27-Nov-2018
Document Number: 96198
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CTH03-M3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
30
C
T
H
03
-M3
1
1
2
3
4
4
4
5
6
2
-
-
-
-
-
-
-
3
4
5
6
7
Vishay
Semiconductors
product
Current rating (30 = 30 A)
Circuit configuration:
C = common cathode
Package:
T = 3L TO-220AB
H = hyperfast recovery
Voltage rating (03 = 300 V)
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
7
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-30CTH03-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?96154
www.vishay.com/doc?95028
revision: 27-Nov-2018
Document Number: 96198
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
3L TO-220AB
DIMENSIONS
in millimeters and inches
A
(6)
E
Q
0.014
M
B A
M
A
A1
(H1)
D2
(6) D
D1
c
3xb
3 x b2
(6)
(E)
Thermal pad
1
D
C
C
2 3
D
L1 (2)
ØP
(6)
H1
B
A
Detail B
A2
Detail B
L
C
A
E1 (6)
Base metal
c
(b, b2)
Plating
c1 (4)
2x
e
e1
View A - A
b1, b3
(4)
0.015
M
B A
M
Lead tip
Section
C - C and D - D
Conforms to JEDEC
®
outline TO-220AB
SYMBOL
A
A1
A2
b
b1
b2
b3
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.50
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.35
8.38
9.02
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.098
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.604
0.330
0.355
NOTES
SYMBOL
D2
E
E1
e
e1
H1
L
L1
ØP
Q
4
4
4
3
MILLIMETERS
MIN.
MAX.
11.68
13.30
10.11
10.51
6.86
8.89
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.91
2.60
3.00
INCHES
MIN.
MAX.
0.460
0.524
0.398
0.414
0.270
0.350
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.154
0.102
0.118
NOTES
6, 7
3, 6
6
6
2
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4)
Dimension b1, b3, and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2, and E1
(7)
Outline conforms to JEDEC
®
TO-220, except D2
Revision: 13-Jun-2019
Document Number: 96154
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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