CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
FEATURES
Top View
A
CNY64
C
• Rated recurring peak voltage (repetitive)
V
IORM
= 1450 V
peak
• Thickness through insulation
3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index:
CTI
200
CNY65
C
E
V
D E
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage
300 V
• for appl. class I - IV at mains voltage
600 V
• for appl. class I - III at mains voltage
1000 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
CNY66
17187-4
17187-5
DESCRIPTION
The CNY64, CNY65, and CNY66 consist of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
•
DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
•
IEC 60950/EN 60950
Office machines
•
VDE 0804
Telecommunication apparatus and data processing
•
IEC60065
Safety for mains-operated electronic and related
household apparatus
•
VDE 0700/IEC 60335
Household equipment
•
VDE 0160
Electronic equipment for electrical power installation
•
VDE 0750/IEC60601
Medical equipment
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• VDE related features:
- rated impulse voltage (transient overvoltage),
V
IOTM
= 12 kV peak
- isolation test voltage (partial discharge test voltage),
V
pd
= 2.8 kV peak
ORDERING INFORMATION
DIP, 400 mil
DIP, 600 mil
DIP, 700 mil
C
N
Y
6
#
PACKAGE
OPTION
50 to 300
CNY64
CNY65
CNY66
x
CTR
BIN
PART NUMBER
AGENCY CERTIFIED/PACKAGE
UL, VDE
DIP-4 HV, 400 mil, high isolation distance
DIP-4 HV, 600 mil, high isolation distance
DIP-4 HV, 700 mil, high isolation distance
10.16 mm
15.24 mm
17.8 mm
CTR (%)
63 to 125
CNY64A
CNY65A
-
100 to 200
CNY64B
CNY65B
CNY66B
Document Number: 83540
Rev. 2.1, 24-Feb-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
1
CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
AC isolation test voltage CNY64
DC isolation test voltage CNY65
DC isolation test voltage CNY66
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case,
10 s
t = 1 min
t=1s
t=1s
V
ISO
V
ISO
V
ISO
P
tot
T
amb
T
stg
T
sld
8200
13.9
13.9
250
- 55 to + 85
- 55 to + 100
260
V
RMS
kV
kV
mW
°C
°C
°C
t
p
/T = 0.5, t
p
10 ms
V
CEO
V
ECO
I
C
I
CM
P
diss
T
j
32
7
50
100
130
100
V
V
mA
mA
mW
°C
t
p
10 μs
V
R
I
F
I
FSM
P
diss
T
j
5
75
1.5
120
100
V
mA
A
mW
°C
TEST CONDITION
SYMBOL
VALUE
UNIT
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Junction capacitance
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
I
F
= 10 mA, I
C
= 1 mA
V
CE
= 5 V, I
F
= 10 mA,
R
L
= 100
f = 1 MHz
V
CEsat
f
c
C
k
110
0.3
0.3
V
kHz
pF
I
C
= 1 mA
I
E
= 100 μA
V
CE
= 20 V, I
F
= 0 A
V
CEO
V
ECO
I
CEO
32
7
200
V
V
nA
I
F
= 50 mA
V
R
= 0, f = 1 MHz
V
F
C
j
1.25
50
1.6
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
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For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83540
Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Very High Isolation Voltage
CURRENT TRANSFER RATIO
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
CNY64,
CNY65,
CNY66
CNY64A
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
CNY65A
CNY64B
CNY65B
CNY66B
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
50
63
63
100
100
100
TYP.
MAX.
300
125
125
200
200
200
UNIT
%
%
%
%
%
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
TEST CONDITION
100 %, t
test
= 1 s
t
Tr
= 60 s, t
test
= 10 s,
(see fig. 2)
V
IO
= 500 V, T
amb
= 25 °C
Insulation resistance
V
IO
= 500 V, T
amb
= 100 °C
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
SYMBOL
V
pd
V
pd
R
IO
R
IO
R
IO
I
SI
P
SO
V
IOTM
T
SI
MIN.
2.8
2.2
10
12
10
11
10
9
120
250
12
150
TYP.
MAX.
UNIT
kV
kV
mA
mW
kV
°C
Note
• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
V
IOTM
250
225
200
175
150
125
100
75
50
25
0
0
25
50
75 100 125 150 175 200
13930
P
SO
(mW)
t
1
, t
2
t
3
, t
4
t
test
t
stres
V
Pd
V
IOWM
V
IORM
= 1 to 10 s
=1s
= 10 s
= 12 s
I
SI
(mA)
0
t
1
t
Tr
= 60 s
t
2
t
3
t
test
t
4
t
stres
t
T
SI
- Safety Temperature(°C)
Fig. 1 - Safety Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Document Number: 83540
Rev. 2.1, 24-Feb-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
3
CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Very High Isolation Voltage
SWITCHING CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
TEST CONDITION
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
,
(see fig. 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
,
(see fig. 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
,
(see fig. 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
,
(see fig. 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
,
(see fig. 3)
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
,
(see fig. 3)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k, (see fig. 4)
V
S
= 5 V, I
F
= 10 mA, R
L
= 1 k, (see fig. 4)
SYMBOL
t
d
t
r
t
f
t
s
t
on
t
off
t
on
t
off
MIN.
TYP.
2.6
2.4
2.7
0.3
5
3
25
42.5
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
I
F
0
I
F
I
F
+5V
I
C
= 5 mA; adjusted through
input amplitude
0
I
C
100 %
90 %
t
p
t
R
G
= 50
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
100
Oscilloscope
R
L
1 M
C
L
20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
95 10900
Fig. 3 - Test Circuit, Non-Saturated Operation
Fig. 5 - Switching Times
I
F
0
I
F
= 10 mA
+5V
I
C
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
95 10843
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
1 kΩ
Fig. 4 - Test Circuit, Saturated Operation
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For technical questions, contact:
optocoupleranswers@vishay.com
Document Number: 83540
Rev. 2.1, 24-Feb-11
CNY64, CNY65, CNY66
Optocoupler, Phototransistor Output,
Vishay Semiconductors
Very High Isolation Voltage
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
P
tot
- Total Power Dissipation (mW)
280
240
200
160
Phototransistor
120
IR-diode
80
40
0
0
21995
I
CEO
- Collector Dark Current,
with open Base (nA)
Coupled device
1000
V
CE
= 20 V
I
F
= 0
100
10
1
25
50
75
100
96 12000
0 10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 6 - Total Power Dissipation vs. Ambient Temperature
Fig. 9 - Collector Dark Current vs. Ambient Temperature
1000
100
I
C
- Collector Current (mA)
I
F
- Forward Current (mA)
V
CE
= 5 V
10
100
10
1
1
0.1
0.1
0
96 11862
0.4
0.8
1.2
1.6
2.0
0.01
0.1
95 11012
1
10
100
V
F
- Forward Voltage (V)
I
F
- Forward Current (mA)
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 10 - Collector Current vs. Forward Current
CTR
rel
- Relative Current Transfer Ratio
1.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
- 30 - 20 - 10 0 10 20 30 40 50 60 70 80
100
I
C
- Collector Current (mA)
1.4
V
CE
= 5 V
I
F
= 10 mA
I
F
= 50 mA
10 mA
10
5 mA
2 mA
1
1 mA
0.1
0.1
95 11013
1
10
100
96 11911
T
amb
- Ambient Temperature (°C)
V
CE
- Collector Emitter Voltage (V)
Fig. 8 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 11 - Collector Current vs. Collector Emitter Voltage
Document Number: 83540
Rev. 2.1, 24-Feb-11
For technical questions, contact:
optocoupleranswers@vishay.com
www.vishay.com
5
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