VS-ETX3007T-N3 datasheet, PDF - EEWORLD Datasheet

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VS-ETX3007T-N3: DescriptionDC reverse withstand voltage (Vr): 650V Average rectified current (Io): 30A Forward voltage drop (Vf): 2.5V @ 30A; CategoryDiscrete semiconductor General diode; File Size146KB，7 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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VS-ETX3007T-N3 Overview

DC reverse withstand voltage (Vr): 650V Average rectified current (Io): 30A Forward voltage drop (Vf): 2.5V @ 30A

VS-ETX3007T-N3 Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	650V
Average rectified current (Io)	30A
Forward voltage drop (Vf)	2.5V @ 30A

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VS-ETX3007T-N3

www.vishay.com

Vishay Semiconductors

Hyperfast Rectifier, 30 A FRED Pt

FEATURES

Base cathode

• Hyper fast and soft recovery time

• Low forward voltage drop

• 175 °C maximum operating junction temperature

• Low leakage current

Cathode

Anode

• True 2 pin package

• Material categorization:

for definitions of compliance

www.vishay.com/doc?99912

please

see

2L TO-220AC

PRIMARY CHARACTERISTICS

F(AV)

at I

at 125 °C

max.

Package

Circuit configuration

30 A

650 V

1.6 V

27 ns

175 °C

2 L TO-220AC

Single

DESCRIPTION / APPLICATIONS

Ultra low V

, soft-switching hyper fast rectifiers optimized

for discontinuous (critical) mode (DCM) power factor

correction (PFC).



The minimized conduction loss, optimized stored charge

and low recovery current minimized the switching losses

and reduce over dissipation in the switching element and

snubbers.

The device is also intended for use as a freewheeling diode

in power supplies and other power switching applications.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Repetitive peak reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperature

SYMBOL

RRM

F(AV)

FSM

, T

Stg

= 120 °C

= 25 °C

TEST CONDITIONS

VALUES

650

210

-55 to +175

UNITS

°C

ELECTRICAL SPECIFICATIONS

= 25 °C unless otherwise specified)

PARAMETER

Breakdown voltage, blocking voltage

Forward voltage

SYMBOL

= 250 μA

= 30 A

= 30 A, T

= 125 °C

= V

rated

= 150 °C, V

= V

rated

= 200 V

Measured lead to lead 5 mm from package body

TEST CONDITIONS

MIN.

650

TYP.

2.1

1.6

0.02

8.0

MAX.

2.5

1.7

300

μA

UNITS

Reverse leakage current

Junction capacitance

Series inductance

Revision: 04-Oct-17

Document Number: 96065

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

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