VEMD1160X01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: 0805 top view
• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
• Radiant sensitive area (in mm
2
): 0.23
• Daylight blocking filter
• AEC-Q101 qualified
• High photo sensitivity
• High radiant sensitivity
• Excellent I
ra
linearity
DESCRIPTION
VEMD1160X01 is a high speed and high sensitive PIN
photodiode with a highly linear photoresponse. It is a low
profile surface mount device (SMD) including the chip with a
0.23 mm
2
sensitive area and a daylight blocking filter.
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 70°
• Floor life: 72 h, MSL 4, according to J-STD-020
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Small signal detection
• Proximity sensors
PRODUCT SUMMARY
COMPONENT
VEMD1160X01
Note
• Test conditions see table “Basic Characteristics”
I
ra
(μA)
1.8
ϕ
(deg)
± 70
λ
0.1
(nm)
700 to 1070
ORDERING INFORMATION
ORDERING CODE
VEMD1160X01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
0805 top view
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction / ambient
According to reflow solder profile Fig. 6
According to EIA / JESD 51
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
20
215
110
-40 to +110
-40 to +110
260
270
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.1, 30-Jun-16
Document Number: 84305
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VEMD1160X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
k
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
V
R
= 5 V, R
L
= 50
Ω, λ
= 820 nm
V
R
= 5 V, R
L
= 50
Ω, λ
= 820 nm
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 835 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm, V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 890 nm, V
R
= 5 V
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
I
ra
ϕ
λ
p
λ
0.1
t
r
t
f
MIN.
-
20
-
-
-
-
-
-
-
1.4
-
-
-
-
-
-
TYP.
0.9
-
0.01
3.8
1.8
350
-2.6
1.8
0.1
1.8
2.6
± 70
840
700 to 1070
60
80
MAX.
1.1
-
5
-
-
-
-
-
-
3
-
-
-
-
-
-
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
μA
deg
nm
nm
ns
ns
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
100
1.4
V
R
= 10 V
I
ro
- Reverse Dark Current (nA)
10
1
0.1
0.01
0.001
I
ra rel
- Relative Reverse Light Current
V
R
= 10 V
940 nm
1.2
865 nm
1.0
835 nm
0.8
0.0001
-40
-20
0
20
40
60
80
100
0.6
-40
-20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.1, 30-Jun-16
Document Number: 84305
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VEMD1160X01
www.vishay.com
Vishay Semiconductors
S(λ)
rel
- Relative
Spectral Sensitivity
100
I
ra
- Reverse Light Current (μA)
V
R
= 5 V,
λ
= 950 nm
10
1.0
0.8
0.6
0.4
0.2
0
400
500
600
700
800
900 1000 1100
1
0.1
0.01
0.01
0.1
1
10
E
e
- Irradiance (mW/cm
2
)
Fig. 3 - Reverse Light Current vs. Irradiance
λ
- Wavelength (nm)
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
I
ra
- Reverse Light Current (μA)
10
mW/cm
2
2.0 mW/cm
2
1.0 mW/cm
2
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
1
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.1
0.05 mW/cm
2
0.02 mW/cm
2
0.01 mW/cm
2
0.01
0.1
1
10
λ
= 950 nm
100
V
R
- Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
4.0
3.5
f = 1 MHz, E = 0
C
D
- Capacitance (pF)
3.0
2.5
2.0
1.5
1.0
0.5
0
0.001
0.01
0.1
1
10
100
V
R
- Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.1, 30-Jun-16
Document Number: 84305
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
10
5.0 mW/cm
2
S
rel
- Relative Radiant
Sensitivity
VEMD1160X01
www.vishay.com
REFLOW SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 72 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 4, according to J-STD-020.
200
max. 30 s
150
max. 120 s
100
max. ramp down 6 °C/s
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s
max. 100 s
DRYING
Time (s)
19841
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS
in millimeters
20018
Rev. 1.1, 30-Jun-16
Document Number: 84305
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VEMD1160X01
www.vishay.com
BLISTER TAPE DIMENSIONS
in millimeters
Vishay Semiconductors
Rev. 1.1, 30-Jun-16
Document Number: 84305
5
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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