SFH619A
www.vishay.com
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, 300 V BV
CEO
FEATURES
• High collector emitter voltage, V
CEO
= 300 V
A
C
1
2
4
3
C
E
• High isolation test voltage: 5300 V
RMS
• Standard plastic DIP-4 package
• Compatible with Toshiba TLP627
• Compliant to RoHS Directive to 2002/95/EC
and in accordance WEEE 2002/96/EC
i179062-3
i179060
DESCRIPTION
The SFH619A is optically coupled isolators with a gallium
arsenide infrared LED and a silicon photodarlington sensor.
Switching can be achieved while maintaining a high degree
of isolation between driving and load circuits. These
optocouplers can be used to replace reed and mercury
relays with advantages of long life, high speed switching and
elimination of magnetic fields.
AGENCY APPROVALS
• UL - file no. E52744 system code H
• BSI IEC 60950; IEC 60065
• FIMKO
ORDERING INFORMATION
DIP
S
F
H
6
1
9
A
-
X
0
0
#
T
#
PART NUMBER
PACKAGE OPTION
TAPE TAPE
AND
AND
REEL REEL
OPTION
7.62 mm
Option 7
Option 9
> 0.7 mm
> 0.1 mm
AGENCY CERTIFIED/PACKAGE
UL, BSI, FIMKO
DIP-4
SMD-4, option 7
SMD-4, option 9
SMD-4, option 9
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on the end.
(2)
Option with 90° rotation.
CTR (%)
≥
1000
SFH619A
SFH619A-X007T
(1)
SFH619A-X009T
(1)
SFH619A-X009T0
(2)
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Peak reverse voltage
Forward continuous current
Derate linearly from 25 °C
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector (load) current
Derate linearly from 25 °C
Power dissipation
Rev. 1.8, 13-Jan-12
P
diss
BV
CEO
BV
ECO
I
C
300
0.3
125
2
150
V
V
mA
mW/°C
mW
P
diss
V
RM
I
F
6
60
1.33
100
V
mA
mW/°C
mW
TEST CONDITION
SYMBOL
VALUE
UNIT
Document Number: 83674
1
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH619A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
VALUE
3.33
P
tot
t=1s
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
V
ISO
R
IO
R
IO
T
stg
T
amb
max. 10 s, dip soldering: distance
to seating plane
≥
1.5 mm
T
sld
250
5300
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
260
UNIT
mW/°C
mW
V
RMS
Ω
Ω
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Derate linearly from 25 °C
Total power dissipation
Isolation test voltage
between emitter and detector
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector emitter dark current
Collector emitter capacitance
COUPLER
Collector emitter saturation voltage
Coupling capacitance
I
F
= 10 mA
V
R
= 6 V
V
R
= 0 V
I
CE
= 100 μA
I
EC
= 100 μA
V
CE
= 200 V,T
A
= 25 °C
V
CE
= 200 V,T
A
= 100 °C
V
CE
= 0 V, f = 1 MHz
I
F
= 1 mA, I
C
= 10 mA
I
F
= 10 mA, I
C
= 100 mA
V
I-O
= 0 V, f = 1 MHz
V
F
I
R
C
O
BV
CEO
BV
ECO
I
CEO
I
CEO
C
CE
V
CEsat
V
CEsat
C
C
300
0.3
10
39
1
1.2
0.6
200
20
1.2
0.02
14
1.5
10
V
μA
pF
V
V
nA
nA
pF
V
V
pF
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
0.3
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
Coupling transfer ratio
TEST CONDITION
I
F
= 1 mA, V
CE
= 1 V
SYMBOL
CTR
MIN.
1000
TYP.
MAX.
UNIT
%
SWITCHING CHARACTERISTICS
PARAMETER
Rise time
Fall time
Turn-on time
Turn-off time
TEST CONDITION
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
V
CC
= 10 V, I
C
= 10 mA, R
L
= 100
Ω
V
CC
= 10 V, I
F
= 16 mA, R
L
= 180
Ω
SYMBOL
t
r
t
r
t
f
t
f
t
on
t
on
t
off
t
off
MIN.
TYP.
3.5
1
14.5
20.5
4.5
1.5
29
53.5
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
Rev. 1.8, 13-Jan-12
Document Number: 83674
2
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH619A
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
SAFETY AND INSULATION RATINGS
PARAMETER
Climatic classification
55/100/21
(according to IEC 68 part 1)
Comparative tracking index
CTI
175
399
10000
V
V
IOTM
890
V
V
IORM
P
SO
400
mW
I
SI
275
mA
175
°C
T
SI
Creepage distance
standard DIP-4
7
mm
Clearance distance
standard DIP-4
7
mm
Creepage distance
400 mil DIP-4
8
mm
Clearance distance
400 mil DIP-4
8
mm
Insulation thickness,
per IEC 60950 2.10.5.1
0.4
mm
reinforced rated
Note
• As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
140
I
C
- Collector Current (mA)
I
F
V
CC
R
L
V
CE
120
T = - 100 °C
A
100
80
T = - 25 °C
A
T = - 40 °C
A
V
O
t
R
IF
60
40
20
0
t
ON
t
F
t
OFF
isfh619a_01
0
isfh619a_04
5
10 15 20 25 30 35 40 45 50
I
F
- Forward Current (mA)
Fig. 1 - Switching Waveform and Switching Schematic
Fig. 3 - Collector Current vs. Forward Current
1000
90
V
CE
= 1.2 V
I
C
- Collector Current (mA)
100
10
1
0.1
0.01
0
V
CE
= 1.0 V
I
C
- Collector Current (mA)
80
70
60
50
40
30
20
10
0
- 40
- 20
I
F
= 10 mA
I
F
= 1 mA
1
10
100
0
20
40
60
80
100
isfh619a_03
I
F
- Forward Current (mA)
isfh619a_05
I
F
- Forward Current (mA)
Fig. 2 - Collector Current (mA) vs. Forward Current (mA)
Fig. 4 - Collector Current vs. Ambient Temperature
Rev. 1.8, 13-Jan-12
Document Number: 83674
3
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH619A
www.vishay.com
Vishay Semiconductors
140
1.2
I
C
- Collector Current (mA)
I
F
= 10 mA
120
1.0
Normalized CTR
100
80
60
40
20
0
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.8
0.6
0.4
0.2
I
F
= 1.0 mA
- 40
isfh619a_09
- 20
0
20
40
60
80
100
isfh619a_06
V
CE
-
Collector Emitter Voltage (V)
T
A
- Temperature (°C)
Fig. 8 - Normalized CTR vs. Temperature
Fig. 5 - Collector Current vs. Collector Emitter Voltage
1000
1000
100
Time Switching (µs)
V = 300 V
CE
V = 200 V
CE
V = 50 V
CE
100
t
OFF
I
CEO
(nA)
10
10
t
ON
1
0.1
- 40
isfh619a_07
1
- 20
0
20
40
60
80
100
isfh619a_10
0.1
1
10
T
A
- Temperature (°C)
R
L
- Load Resistor (kΩ)
Fig. 9 - Switching Time vs. Load Resistor
Fig. 6 - Collector Emitter Dark Current vs.
Collector Emitter Voltage over Temperature
10 000
Current Transfer Ratio CTR
V
CE
= 1.2 V
1000
V
CE
= 1 V
100
0.1
isfh619a_08
1
10
100
I
F
- Forward Current (mA)
Fig. 7 - Current Transfer Ratio vs. Forward Current
Rev. 1.8, 13-Jan-12
Document Number: 83674
4
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SFH619A
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
2
1
Pin one ID
Vishay Semiconductors
6.48
6.81
ISO method A
3
4.55
4.83
0.76
1.14
4
0.79 typ.
1.27 typ.
3.30
3.81
7.62 typ.
4°
typ.
0.46
0.56
10°
0.508
0.89
1.27
2.54
2.79
3.30
0° to 15°
0.2
0.3
5.84
6.35
i178027
SMD
Pin one ID
2.54
6.48
6.81
R 0.25
0.76
1.78
8 min.
11.05
3
4
4.55
4.83
0.76
1.14
0.79 typ.
1.52
9.52
10.03
7.52
7.90
10°
0.25 typ.
3.30
3.81
ISO method A
4° typ.
2.54 typ.
1.27 typ.
i178029
Lead
coplanarity
0.004 max.
0.249
0.102
8 min.
0.508
1.020
3° to 7°
Option 6
10.36
9.96
7.8
7.4
Option 7
7.62 typ.
Option 9 or SFH6186
9.53
10.03
7.62 ref.
4.6
4.1
0.102
0.249
0.30 typ.
0.7
8 min.
0.35
0.25
8.4 min.
10.3 max.
0.76
2.54
R0.25
1.78
18450-11
0.51
1.02
15° max.
10.16
10.92
0.76
2.54
R0.25
1.78
8 min.
11.05
1.52
8 min.
11.05
1.52
PACKAGE MARKING
(example)
SFH619A
-X007
V YWW H 68
Notes
• Only option 7 reflected in the package marking.
• Tape and reel suffix (T) is not part of the package marking.
Rev. 1.8, 13-Jan-12
Document Number: 83674
5
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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