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I2P
AK
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
Rev. 02 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 7;
see
Figure 8
I
D
= 100 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1][2]
Min
-
-
-
-
Typ
-
-
-
3.7
Max
75
100
333
4.3
Unit
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
-
-
630
mJ
[1]
[2]
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
NXP Semiconductors
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT226 (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7E4R3-75C
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
Type number
BUK7E4R3-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
2 of 13
NXP Semiconductors
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 4
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 4
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 100 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
see
Figure 3
[4][5][6][7]
[2][1]
[2][3]
[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
Max
75
75
20
100
100
192
769
333
175
175
100
192
769
630
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
mJ
[1][2]
[3][2]
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
Current is limited by power dissipation chip rating.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK7E4R3-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
3 of 13
NXP Semiconductors
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
200
I
D
(A)
150
003aab376
120
P
der
(%)
80
03aa16
100
(1)
40
50
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
10
3
I
AL
(A)
10
2
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aab385
(1)
10
(2)
(3)
1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
BUK7E4R3-75C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 19 April 2011
4 of 13
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