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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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BUK7619-100B
N-channel TrenchMOS standard level FET
Rev. 01 — 10 October 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
using NXP High Performance Automotive (HPA) TrenchMOS technology.
1.2 Features
I
TrenchMOS technology
I
175
°C
rated
I
Q101 compliant
I
Standard level compatible
1.3 Applications
I
Automotive systems
I
Motors, lamps and solenoids
I
General purpose power switching
I
12 V, 24 V and 42 V loads.
1.4 Quick reference data
I
E
DS(AL)S
≤
222 mJ
I
I
D
≤
64 A
I
R
DSon
= 17 mΩ (typ)
I
P
tot
≤
200 W
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base; connected to drain (D)
mbb076
Simplified outline
mb
Symbol
D
G
S
2
1
3
SOT404 (D2PAK)
NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Package
Name
BUK7619-100B
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3-leads (one
lead cropped)
Version
SOT404
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
E
DS(AL)S
Parameter
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current
peak reverse drain current
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
T
sp
= 25
°C;
V
GS
= 10 V; see
Figure 2
and
3
T
sp
= 100
°C;
V
GS
= 10 V; see
Figure 2
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
see
Figure 3
T
mb
= 25
°C;
see
Figure 1
R
GS
= 20 kΩ
Conditions
Min Max
-
-
-
-
-
-
-
100
100
±20
64
45
256
200
Unit
V
V
V
A
A
A
W
−55
+175
°C
−55
+175
°C
-
-
-
64
256
222
A
A
mJ
Source-drain diode
Avalanche ruggedness
non-repetitive drain-source avalanche unclamped inductive load; I
D
= 64 A;
energy
V
DS
≤
100 V; R
GS
= 50
Ω;
V
GS
= 10 V; starting
at T
j
= 25
°C
repetitive drain-source avalanche
energy
[1]
E
DS(AL)R
-
-
mJ
[1]
Conditions:
a) Maximum value not quoted. Repetitive rating defined in
Figure 16.
b) Single-pulse avalanche rating limited by T
j(max)
of 175
°C.
c) Repetitive avalanche rating limited by an average junction temperature of 170
°C.
d) Refer to application note
AN10273
for further information.
BUK7619-100B_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 10 October 2007
2 of 12
NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
120
P
der
(%)
80
03na19
80
I
D
(A)
60
003aab142
40
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
P
der
P
tot
=
-----------------------
×
100
%
-
P
tot
(
25°C
)
V
GS
≥
10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
Fig 2. Continuous drain current as a function of
mounting base temperature
003aab143
t
p
= 10
µ
s
100
µ
s
10
DC
1
1 ms
10 ms
100 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
T
mb
= 25
°C;
I
DM
is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7619-100B_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 10 October 2007
3 of 12
NXP Semiconductors
BUK7619-100B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction mounted on a printed-circuit board;
to ambient
minimum footprint
Conditions
Min
-
-
Typ
-
50
Max
0.74
-
Unit
K/W
K/W
1
Z
th (j-mb)
(K/W)
δ
= 0.5
0.2
10
-1
0.1
0.05
10
-2
0.02
P
003aab144
δ
=
t
p
T
single shot
t
p
T
t
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7619-100B_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 10 October 2007
4 of 12
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