Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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Nexperia.
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semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Should be replaced with:
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© Nexperia B.V. (year). All rights reserved.
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
BUK7526-100B
25 February 2014
TO
-22
0
AB
N-channel TrenchMOS standard level FET
Product data sheet
1. General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
•
•
•
•
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
3. Applications
•
•
•
•
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 2; Fig. 3
T
mb
= 25 °C;
Fig. 1
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11; Fig. 12
V
GS
= 10 V; I
D
= 25 A; V
DS
= 80 V;
T
j
= 25 °C;
Fig. 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
source avalanche
energy
I
D
= 49 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
-
-
144
mJ
-
13
-
nC
Min
-
-
-
Typ
-
-
-
Max
100
49
157
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
22
26
mΩ
Dynamic characteristics
Q
GD
gate-drain charge
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NXP Semiconductors
BUK7526-100B
N-channel TrenchMOS standard level FET
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
1 2 3
TO-220AB (SOT78A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK7526-100B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
7. Marking
Table 4.
Marking codes
Marking code
BUK7526-100B
Type number
BUK7526-100B
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
P
tot
I
D
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 2; Fig. 3
T
mb
= 100 °C; V
GS
= 10 V;
Fig. 2
BUK7526-100B
All information provided in this document is subject to legal disclaimers.
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
Max
100
100
20
157
49
34
Unit
V
V
V
W
A
A
© NXP N.V. 2014. All rights reserved
Product data sheet
25 February 2014
2 / 12
NXP Semiconductors
BUK7526-100B
N-channel TrenchMOS standard level FET
Symbol
I
DM
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Parameter
peak drain current
storage temperature
junction temperature
Conditions
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
Min
-
-55
-55
Max
197
175
175
Unit
A
°C
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 49 A; V
sup
≤ 100 V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
03na19
-
-
49
197
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
-
144
mJ
120
P
der
(%)
80
60
I
D
(A)
40
03nm45
40
20
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
( °C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Normalized continuous drain current as a
function of mounting base temperature
BUK7526-100B
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© NXP N.V. 2014. All rights reserved
Product data sheet
25 February 2014
3 / 12
NXP Semiconductors
BUK7526-100B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
03nm43
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 µ s
100 µ s
10
DC
1 ms
10 ms
100 ms
1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
1
Z
th(j-mb)
(K/W)
10
- 1
Conditions
Fig. 4
Min
-
Typ
-
Max
0.95
Unit
K/W
R
th(j-a)
vertical in still air
-
-
60
K/W
03nm44
δ = 0.5
0.2
0.1
0.05
0.02
t
p
T
10
- 2
single shot
P
δ=
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
10
- 1
t
T
t
p
(s)
1
Fig. 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7526-100B
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
25 February 2014
4 / 12
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