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1N749C-1

Description
3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size33KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N749C-1 Overview

3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

1N749C-1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance22 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage4.3 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2%
Working test current20 mA
Base Number Matches1
• 1N746A-1 THRU 1N759-1 AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/127
• 1N4370A-1 THRU 1N4372A-1 AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/127
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
1N746
thru
1N759A
and
1N746A-1
thru
1N759A-1
and
1N4370
thru
1N4372A
and
1N4370A-1
thru
1N4372A-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
JEDEC
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ @ 1ZT
(NOTE 2)
VOLTS
1N4370A
1N4371A
1N4372A
1N746A
1N747A
1N748A
1N749A
1N750A
1N751A
1N752A
1N753A
1N754A
1N755A
1N756A
1N757A
1N758A
1N759A
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
12.0
ZENER
TEST
CURRENT
1ZT
MAXIMUM
ZENER
IMPEDANCE
(NOTE 3)
ZZT@ 1ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
OHMS
30
30
29
28
24
23
22
19
17
11
7
5
6
8
10
17
30
µ
A
MAXIMUM
REVERSE CURRENT
IR@ VR
MAXIMUM
ZENER
CURRENT
1
ZM
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
4.0
5.0
6.0
7.0
8.0
9.0
mA
155
140
125
120
110
100
90
85
75
70
65
60
55
50
45
40
35
100
60
30
5
3
2
2
5
5
5
5
2
2
1
1
1
1
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250
°
C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°
C/W maximum
NOTE 1
NOTE 2
NOTE 3
Zener voltage tolerance on "A" suffix is +5%. No Suffix denotes + 10% tolerance,
"C" suffix denotes + 2% tollerance and "D" suffix denotes + 1% tolerance.
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
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