MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>
MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>
PS21661-RZ/FR
PS21661-RZ/FR
TRANSFER-MOLD TYPE
TRANSFER-MOLD TYPE
INSULATED TYPE
INSULATED TYPE
PS21661-RZ
PS21661-FR
INTEGRATED POWER FUNCTIONS
• 600V/3A low-loss 5th generation IGBT inverter bridge for 3
phase DC-to-AC power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
•
•
•
•
For upper-leg IGBT
S
:Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage protection (UV).
For lower-leg IGBT
S
: Drive circuit, Control circuit under-voltage protection (UV), Short circuit protection (SC).
Fault signaling : Corresponding to an SC fault (Lower-side IGBT) or a UV fault (Lower-side supply).
Input interface : 5V line CMOS/TTL compatible Schmitt Trigger receiver circuit (Active high),
Arm-short-through interlock protection.
APPLICATION
AC100V~200V, three-phase inverter drive for small power motor control.
Fig. 1 PS21661-RZ PACKAGE OUTLINES
Dimensions in mm
q~#5
: pins numbers. The terminals array, please reference
to the Fig.5.
Mar. 2004
MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>
PS21661-RZ/FR
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 2 PS21661-FR PACKAGE OUTLINES
Dimensions in mm
q~#5
: pins numbers. The terminals array, please reference
to the Fig.7.
MAXIMUM RATINGS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CC
V
CC(surge)
V
CES
±I
C
±I
CP
P
C
T
j
Parameter
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Collector current
Collector current (peak)
Collector dissipation
Junction temperature
Condition
Applied between P-N
Applied between P-N
T
f
= 25°C
T
f
= 25°C, tw
≤
1msec
T
f
= 25°C, per 1 chip
(Note 1)
Ratings
450
500
600
3
6
13.8
–20~+150
Unit
V
V
V
A
A
W
°C
Note 1 :
The maximum junction temperature rating of the power chips integrated within the SIP-IPM is 150°C (@ T
f
≤
100°C) however, to
insure safe operation of the SIP-IPM, the average junction temperature should be limited to T
j(ave)
≤
125°C (@ T
f
≤
100°C).
CONTROL (PROTECTION) PART
Symbol
V
D
V
DB
V
IN
V
FO
I
FO
V
SC
Parameter
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
Condition
Applied between V
N1
-V
NC
Applied between V
UFB
-U (V
UFS
),
V
VFB
-V (V
VFS
), V
WFB
-W (V
WFS
)
Applied between U
P
, V
P
, W
P
-V
NC
,
U
N
, V
N
, W
N
-V
NC
Applied between F
O
-V
NC
Sink current at F
O
terminal
Applied between CIN-V
NC
Ratings
20
20
–0.5~V
D
–0.5~V
D
10
–0.5~V
D
Unit
V
V
V
V
mA
V
Mar. 2004
MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>
PS21661-RZ/FR
TRANSFER-MOLD TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Parameter
V
CC(PROT)
Self protection supply voltage limit
(short circuit protection capability)
Heatsink operation temperature
T
f
Storage temperature
T
stg
V
iso
Isolation voltage
Condition
V
D
= 13.5~16.5V, Inverter part
T
j
= 125°C start, non-repetitive, less than 2
µs
(Note 2)
60Hz, Sinusoidal, AC 1 minute, connection
pins to heat-sink plate
Ratings
400
–20~+100
–40~+125
1500
Unit
V
°C
°C
V
rms
Note 2 : T
f
MEASUREMENT POINT
AI Board Specification : Dimensions 50
×
50
×
10mm, finishing 12s, warp –50~+100µm
Control
Terminals
AI Board
SIP-IPM
IGBT Chip
Temp. measure-
ment point
(inside the AI board)
FWD Chip
10.5mm
15mm
1.5mm
10mm
25mm
Temp. measurement point
(inside the AI board)
100~200µm of evenly applied Silicon-Grease
THERMAL RESISTANCE
Symbol
R
th(j-f)Q
R
th(j-f)F
Parameter
Junction to fin thermal
resistance
Condition
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
(Note 3)
(Note 3)
Min.
—
—
Limits
Typ.
—
—
Max.
9.0
9.0
Unit
°C/W
Note 3 :
Grease with good thermal conductivity should be applied evenly about +100µm ~ +200µm on the contact surface of SIP-IPM and a
heat-sink.
ELECTRICAL CHARACTERISTICS
(T
j
= 25°C, unless otherwise noted)
INVERTER PART
Symbol
V
CE(sat)
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
I
CES
Parameter
Collector-emitter saturation
voltage
FWD forward voltage
Condition
V
D
= V
DB
= 15V
I
C
= 3A, T
j
= 25°C
V
IN
= 5V
I
C
= 3A, T
j
= 125°C
T
j
= 25°C, –I
C
= 3A, V
IN
= 0V
V
CC
= 300V, V
D
= 15V
Switching times
I
C
= 3A, T
j
= 125°C
Inductive load (upper-lower arm)
V
IN
= 0
↔
5V
V
CE
= V
CES
T
j
= 25°C
T
j
= 125°C
Min.
—
—
—
0.35
—
—
—
—
—
—
Limits
Typ.
1.60
1.70
1.55
0.70
0.20
0.35
1.00
0.55
—
—
Max.
2.15
2.30
2.00
1.10
—
0.55
1.50
1.10
1
10
Unit
V
V
µs
µs
µs
µs
µs
mA
Collector-emitter cut-off
current
CONTROL (PROTECTION) PART
Symbol
I
D
Circuit current
I
DB
V
FOH
V
FOL
I
IN
V
SC(ref)
UV
DBt
UV
DBr
UV
Dt
UV
Dr
t
FO
V
th(on)
V
th(off)
Fault output voltage
Input current
Short circuit trip level
Supply circuit under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
Parameter
Condition
V
D
= 15V, V
IN
= 0V
Total of V
N1
-V
NC
(U, V, W)
V
D
= 15V, V
IN
= 5V
V
DB
= 15V, V
IN
= 0V V
UFB
-U (V
UFS
), V
VFB
-V (V
VFS
),
V
DB
= 15V, V
IN
= 5V V
WFB
-W (V
WFS
)
V
SC
= 0V, F
O
circuit : 1kΩ to 5V pull-up
V
SC
= 1V, IF
O
= –10mA
V
IN
= 5V
T
j
= 25°C, V
D
= 15V
(Note 4)
Trip level
Reset level
T
j
≤
125°C
Trip level
Reset level
(Note 4)
Applied between:
U
P
, V
P
, W
P
-V
NC
, U
N
, V
N
, W
N
-V
NC
Min.
—
—
—
—
4.9
—
0.70
0.43
10.0
10.5
10.3
10.8
20
2.10
1.10
Limits
Typ.
—
—
—
—
—
—
1.06
0.48
—
—
—
—
40
2.35
1.40
Max.
3.60
3.90
0.50
0.50
—
0.95
1.50
0.53
12.0
12.5
12.5
13.0
—
2.60
1.80
Unit
mA
mA
mA
mA
V
V
mA
V
V
V
V
V
µs
V
V
Note 4 :
Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip-
level is less than 5.1A
Mar. 2004
MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>
PS21661-RZ/FR
TRANSFER-MOLD TYPE
INSULATED TYPE
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Mounting torque
Weight
Heat-sink flatness
Mounting screw : (M3)
(Note 5)
Condition
Min.
0.59
—
–50
Limits
Typ.
0.69
10
—
Max.
0.78
—
+100
Unit
N·m
g
µm
Note 5: Measurement point of heat-sink flatness
SIP-IPM
+ –
Measurement Range
3mm
Heat-sink
–
+
Heat-sink
RECOMMENDED OPERATION CONDITIONS
Symbol
V
CC
V
D
V
DB
∆V
D
,
∆V
DB
t
dead
f
PWM
I
O
V
NC
t
XX
Parameter
Supply voltage
Control supply voltage
Control supply voltage
Control supply variation
Arm shoot-through blocking time
PWM input frequency
Allowable r.m.s current
V
NC
terminal voltage
minimum on pulse width
Condition
Applied between P-N
Applied between V
N1
-V
NC
Applied between V
UFB
-U (V
UFS
), V
VFB
-V (V
VFS
), V
WFB
-W (V
WFS
)
Relates to corresponding input signal for blocking arm shoot-through
T
j
≤
125°C, T
f
≤
100°C
V
CC
= 300V, V
D
= 15V, f
C
= 15kHz, P.F = 0.8, sinusoidal
T
j
≤
125°C, T
f
≤
100°C
Applied between V
NC
-N (include surge voltage)
U
P
, V
P
, W
P
, U
N
, V
N
, W
N
terminal
Min.
0
13.5
13.0
–1
1.5
—
—
–5
0.7
Limits
Typ.
300
15.0
15.0
—
—
15
—
—
—
Max.
400
16.5
18.5
1
—
—
1.5
5
—
Unit
V
V
V
V/µs
µs
kHz
Arms
V
µs
Mar. 2004
MITSUBISHI SEMICONDUCTOR <Single-In-Line Package Intelligent Power Module>
PS21661-RZ/FR
TRANSFER-MOLD TYPE
INSULATED TYPE
Fig. 3 THE SIP-IPM INTERNAL CIRCUIT
U(V
UFS
)
V
UFB
SIP-IPM
P
V
N1
V
CC
V
B
HO
V
S
COM
U
P
U
N
PIN
NIN
F
O
LO
VNO
N
CIN
V(V
VFS
)
V
VFB
V
N1
V
CC
V
B
HO
V
S
COM
V
P
V
N
PIN
NIN
F
O
LO
VNO
CIN
W(V
WFS
)
V
WFB
V
N1
V
NC
W
P
W
N
Fo
CIN
V
CC
V
B
HO
V
S
COM
PIN
NIN
F
O
LO
VNO
CIN
Mar. 2004
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