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PR1506G

Description
1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size117KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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PR1506G Overview

1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

NOT RECOMMENDED
FOR NEW DESIGN
PR1501G/S - PR1507G/S
1.5A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Features
Glass Passivated Die Construction
Fast Switching for High Efficiency
Surge Overload Rating to 50A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 4)
Mechanical Data
Case: DO-41, DO-15
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Ordering Information: See Page 3
DO-41 Weight: 0.35 grams (approximate)
DO-15 Weight: 0.40 grams (approximate)
Dim
A
B
C
D
DO-41
DO-15
Min
Max
Min
Max
25.40
25.40
4.06
5.21
5.50
7.62
0.71 0.864 0.686 0.889
2.00
2.72
2.60
3.60
All Dimensions in mm
“GS” Suffix Designates DO-41 Package
“G” Suffix Designates DO-15 Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 5)
RMS Reverse Voltage
Average Rectified Output Current
@ T
A
= 55°C
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage (Note 5)
Reverse Recovery Time (Note 3)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
5.
@T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
θJA
T
j,
T
STG
PR1501 PR1502 PR1503 PR1504 PR1505 PR1506 PR1507
Unit
G/GS
G/GS
G/GS
G/GS
G/GS
G/GS
G/GS
50
35
100
70
200
140
400
280
1.5
50
1.3
5.0
200
150
25
65
-65 to +150
250
500
600
420
800
560
1000
700
V
V
A
A
V
μA
ns
pF
°C/W
°C
@ I
F
= 1.5A
@ T
A
= 25°C
@ T
A
= 100°C
Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.2 5A. See figure 5.
RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see
EU Directive Annex Notes 5 and 7.
Short duration pulse test used to minimize self-heating effect.
DS27004 Rev. 6 - 3
1 of 3
www.diodes.com
PR1501G/S - PR1507G/S
© Diodes Incorporated

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