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BD746A

Description
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
CategoryThe transistor   
File Size91KB,6 Pages
ManufacturerPower Innovations Limited
Websitehttp://www.power-innovations.com
Download Datasheet Parametric Compare View All

BD746A Overview

Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

BD746A Parametric

Parameter NameAttribute value
MakerPower Innovations Limited
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
Designed for Complementary Use with the
BD745 Series
115 W at 25°C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
q
20 A Continuous Collector Current
25 A Peak Collector Current
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
C
2
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
RATING
BD746
Collector-base voltage (I
E
= 0)
BD746A
BD746B
BD746C
BD746
Collector-emitter voltage (I
B
= 0)
BD746A
BD746B
BD746C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
T
A
T
j
T
stg
T
L
2
SYMBOL
VALUE
-50
-70
-90
-110
-45
-60
-80
-100
-5
-20
-25
-7
115
3.5
90
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
CBO
V
V
CEO
V
V
A
A
A
W
W
mJ
°C
°C
°C
°C
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

BD746A Related Products

BD746A BD746
Description Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 20A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Maker Power Innovations Limited Power Innovations Limited
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 20 A 20 A
Collector-emitter maximum voltage 60 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 5 5
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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