i,
O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistors
D45H Series
DESCRIPTION
• Low Saturation Voltage
• Fast Switching Speeds
• Complement to Type D44H Series
, ^
2
APPLICATIONS
• Designed for general pourpose power amplification and
switching such as output or driver stages in applications
such as switching regulators.converters and power amplifier.
1
1 2 3
3
2. COLLECTOR
3.BWITTER
PIN 1.BASE
TO-220C package
W- - B
v\
-4(*S
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
PARAMETER
D45H8
D45H10.11
VALUE
-60
V
-80
-5
-10
-20
-50
150
V
A
A
W
I'ToJ
UNIT
A "
'
^ert
e
JdOC
1
^
f~~
v
~*l
S-
^
~~ soft
•*
VCEO
Collector-Emitter
Voltage
Emitter-Base Voltage
i
i
VEBO
Ic
ICM
PC
T]
Tstg
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@T
C
=25'C
Junction Temperature
Storage Temperature Range
i
J
FT
•"
c
_^__
mm
DIM
IF
A
B
C
D
F
G
H
J
soi-,
1,
t
j
•c
•c
-55-150
THERMAL CHARACTERISTICS
SYMBOL
R(h j-c
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
2.5
75
UNIT
K
L
Q
r/w
"CM/
S
U
V
R
Rth j-a
WIN
15.70
9.90
4.20
0.70
3.40
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
D45H10
VcE(sat)
D45H Series
CONDITIONS
I
C
=-8A;I
B
=-0.8A
MIN
TYP
MAX
UNIT
Collector-Emitter
Saturation Voltage
D45H8.11
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
D45H10
lc=-8A;l
B
=-0.4A
I
C
=-8A;I
B
=-0.8A
V
CE
= Rated VCEO;
V
EB
= -5V; l
c
= 0
35
|_ —
T A . \/^,_—
1\
-1
V
VBE(sat)
-1.5
V
ICES
-10
uA
IEBO
-100
uA
hpE-1
DC Current Gain
D45H8.11
D45H10
60
20
U—
4A • \A-i-- -1\
hFE-2
DC Current Gain
D45H8.11
Output Capacitance
Current-Gain— Bandwidth Product
40
COB
V
CB
=-10V,f=0.1MHz
130
PF
MHz
fr
lc=-0.5A;V
CE
=-1 OV;f
t
est=20MHz
50
Switching Times
Storage Time
lc= -5A; I
B
1= -I
B
2= -0.5A
V
cc
= 20V
Fall Time
0.14
0.5
ts
ns
us
tf
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