DTC114TE-TP-HF datasheet, PDF - EEWORLD Datasheet

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DTC114TE-TP-HF: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryThe transistor; File Size223KB，3 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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DTC114TE-TP-HF Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

DTC114TE-TP-HF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

DTC114TE

Features

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

Only the on/off conditions need to be set for operation, making

device design easy

Halogen

free available upon request by adding suffix "-HF"

NPN Digital Transistor

SOT-523

•

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base voltage

Collector Current-Continuous

Collector Dissipation

Junction Temperature

Storage Temperature Range

Symbol

CBO

CEO

EBO

STG

Value

100

150

-55~150

Unit

1. Base

2. Emitter

3. Collector

Electrical Characteristics

Sym

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

DIMENSIONS

Parameter

Collector-Base Breakdown Voltage

=50uA, I

=0)

Collector-Emitter Breakdown Voltage

=1mA, I

=0)

Emitter-Base Breakdown Voltage

=50uA, I

=0)

Collector Cut-off Current

=50V, I

=0)

Emitter Cut-off Current

=4V, I

=0)

DC Current Gain

=5V, I

=1mA)

Collector-Emitter Saturation Voltage

=10mA, I

=1mA)

Input Resistor

Transition Frequency

=10V, I

=-5mA, f=100MHz)

Min

---

100

---

Typ

---

300

---

250

Max

---

0.5

600

0.3

---

Unit

---

MHz

DIM

INCHES

MIN

MAX

.059

.067

.030

.033

.057

.069

.020 Nominal

.035

.043

.000

.004

.028

.031

.004

.008

.010

.014

MIN

MAX

1.50

1.70

0.75

0.85

1.45

1.75

0.50Nominal

0.90

1.10

.000

.100

.70

0.80

.100

.200

.25

.35

NOTE

*Marking: 04

www.mccsemi.com

Revision: B

1 of

2013/01/01

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