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DTC114YUA-TP

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryThe transistor   
File Size210KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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DTC114YUA-TP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

DTC114YUA-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.1 A
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)68
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
DTC114YUA
Features
Absolute maximum ratings @ 25
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making
device design easy
Halogen
free available upon request by adding suffix "-HF"
Min
---
-6
---
---
---
-55
Typ
50
---
70
100
200
150
---
Max
---
40
---
---
---
150
Unit
V
V
mA
mW
NPN
Digital Transistors
SOT-323
A
D
3
B
1
F
E
2
C
1: IN
2: GND
3: OUT
Electrical Characteristics @ 25
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Parameter
Input voltage (V
CC
=5V, I
O
=100­A)
(V
O
=0.3V, I
O
=1mA)
Output voltage (I
O
/I
I
=5mA/0.25mA)
Input current (V
I
=5V)
Output current (V
CC
=50V, V
I
=0)
DC current gain (V
O
=5V, I
O
=5mA)
Input resistance
Resistance ratio
Transition frequency
(V
CE
=10V, I
E
=5mA, f=100MHz)
Min
---
1.4
---
---
---
68
7.0
3.7
---
Typ
---
---
0.1
---
---
---
10
4.7
250
Max
0.3
---
0.3
0.88
0.5
---
13
5.7
---
Unit
V
V
V
mA
­A
MHz
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
*Marking: 64
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
Suggested Solder
Pad Layout
0.70
0.90
1.90
mm
0.65
0.65
www.mccsemi.com
Revision: C
1 of 2
2013/09/24

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