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DRA9A14Y

Description
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN
CategoryThe transistor   
File Size468KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
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DRA9A14Y Overview

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, 3 PIN

DRA9A14Y Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.125 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DRA9A14Y
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC9A14Y
DRA5A14Y in SSMini3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSMini3-F3-B
Name
Pin
1: Base
2: Emitter
3: Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
–50
–50
–80
125
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
Marking Symbol: GJ
Internal Connection
B
R
1
R
2
C
E
Resistance value
R
1
R
2
10
47
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Resistance ratio
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
R
1
/ R
2
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
0.17
10
0.21
–1.7
– 0.5
+30%
0.25
80
– 0.25
Min
–50
–50
– 0.1
– 0.5
– 0.2
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2011
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