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DSC2F01P

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN
CategoryThe transistor   
File Size486KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSC2F01P Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN

DSC2F01P Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1900 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSC2F01
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
High transition frequency f
T
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
Mini3-G3-B
Name
Pin
1. Base
2. Emitter
3. Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
15
10
3
50
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Marking Symbol: C7
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Collector-base parameter
Reverse transfer capacitance
(Common base)
Symbol
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
r
bb
' • C
C
C
rb
Conditions
I
C
= 2 mA, I
B
= 0
I
E
= 10
mA,
I
C
= 0
V
CB
= 10 V, I
E
= 0
V
CE
= 4 V, I
C
= 5 mA
I
C
= 20 mA, I
B
= 4 mA
V
CE
= 4 V, I
C
= 5 mA
V
CB
= 4 V, I
E
= 0 , f = 1 MHz
V
CE
= 4 V, I
C
= 5 mA , f = 31.9 MHz
V
CE
= 4 V, I
C
= 0 , f = 1 MHz
1.9
1.2
12
0.6
75
Min
10
3
1
220
0.5
Typ
Max
Unit
V
V
mA
V
GHz
pF
ps
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
Rank
h
FE
Marking Symbol
P
P
75 to 130
C7P
Q
Q
110 to 220
C7Q
0
No-rank
75 to 220
C7
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: January 2011
Ver. BED
1

DSC2F01P Related Products

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Description RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, 3 PIN
Is it Rohs certified? conform to conform to conform to
Maker Panasonic Panasonic Panasonic
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Is Samacsys N N N
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 10 V 10 V 10 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 75 110
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 1900 MHz 1900 MHz 1900 MHz
Base Number Matches 1 1 1

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